NSVMUN5111DW1T3G Allicdata Electronics
Allicdata Part #:

NSVMUN5111DW1T3G-ND

Manufacturer Part#:

NSVMUN5111DW1T3G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V DUAL BIPO SC88-3
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSVMUN5111DW1T3G datasheetNSVMUN5111DW1T3G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05485
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

The NSVMUN5111DW1T3G is an innovative device suitable for a variety of applications. It is a four-channel, monolithic, low-noise 4-channel, pre-biased NPN/PNP combination, with an integrated unequal current mirror and low noise gain-bandwidth product. In addition to the exceptional combination of attributes, the device also demonstrates very low frequency noise, making it particularly suitable for low-noise applications.

Application Fields

The device offers a range of attractive features for various applications, including:

  • Amplifiers
  • Switching Regulators
  • Linear Regulators
  • Multi-Channel Power Amplifiers
  • Computer Multimedia Systems
  • DSP Applications
  • High-Speed Signal Processing Circuits

It is also suitable for position sensing applications, due to its excellent linearity and ultra-low noise performance. The device demonstrates excellent characteristics of linearity, ultra-low noise and wide dynamic range.

Working Principle

The NSVMUN5111DW1T3G is an integrated, pre-biased NPN/PNP combination, with an integrated unequal current mirror. It has a wide input signal range and the output signal is adjusted via a current mirror. The unequal current mirrors effectively provide higher signal-to-noise ratio, as well as improved linearity. The device also has a pre-biased input amplifier which reduces power consumption and helps to protect against process and temperature related variations. The device demonstrates very low frequency noise, making it particularly suitable for low-noise applications.

The device offers excellent characteristics of linearity, ultra-low noise and wide dynamic range. The device can drive a variety of applications, allowing for fast switching and accurate positioning. The device is also very energy efficient and its energy efficiency is further enhanced by the low-power pre-biased input amplifier.

Conclusion

The NSVMUN5111DW1T3G is an innovative device suitable for a range of applications, including amplifiers, switching regulators, linear regulators, multi-channel power amplifiers, computer multimedia systems, DSP applications and high-speed signal processing circuits. The device offers excellent characteristics of linearity, ultra-low noise, wide dynamic range and very low frequency noise. It can be used in a variety of applications, including position sensing applications, due to its excellent linearity, ultra-low noise performance and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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