
Allicdata Part #: | NSVMUN5111DW1T3G-ND |
Manufacturer Part#: |
NSVMUN5111DW1T3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V DUAL BIPO SC88-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.06000 |
10 +: | $ 0.05820 |
100 +: | $ 0.05700 |
1000 +: | $ 0.05580 |
10000 +: | $ 0.05400 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
。Transistors - Bipolar (BJT) - Arrays, Pre-Biased
The NSVMUN5111DW1T3G is an innovative device suitable for a variety of applications. It is a four-channel, monolithic, low-noise 4-channel, pre-biased NPN/PNP combination, with an integrated unequal current mirror and low noise gain-bandwidth product. In addition to the exceptional combination of attributes, the device also demonstrates very low frequency noise, making it particularly suitable for low-noise applications.
Application Fields
The device offers a range of attractive features for various applications, including:
- Amplifiers
- Switching Regulators
- Linear Regulators
- Multi-Channel Power Amplifiers
- Computer Multimedia Systems
- DSP Applications
- High-Speed Signal Processing Circuits
It is also suitable for position sensing applications, due to its excellent linearity and ultra-low noise performance. The device demonstrates excellent characteristics of linearity, ultra-low noise and wide dynamic range.
Working Principle
The NSVMUN5111DW1T3G is an integrated, pre-biased NPN/PNP combination, with an integrated unequal current mirror. It has a wide input signal range and the output signal is adjusted via a current mirror. The unequal current mirrors effectively provide higher signal-to-noise ratio, as well as improved linearity. The device also has a pre-biased input amplifier which reduces power consumption and helps to protect against process and temperature related variations. The device demonstrates very low frequency noise, making it particularly suitable for low-noise applications.
The device offers excellent characteristics of linearity, ultra-low noise and wide dynamic range. The device can drive a variety of applications, allowing for fast switching and accurate positioning. The device is also very energy efficient and its energy efficiency is further enhanced by the low-power pre-biased input amplifier.
Conclusion
The NSVMUN5111DW1T3G is an innovative device suitable for a range of applications, including amplifiers, switching regulators, linear regulators, multi-channel power amplifiers, computer multimedia systems, DSP applications and high-speed signal processing circuits. The device offers excellent characteristics of linearity, ultra-low noise, wide dynamic range and very low frequency noise. It can be used in a variety of applications, including position sensing applications, due to its excellent linearity, ultra-low noise performance and low power consumption.
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