| Allicdata Part #: | NSVMUN5137DW1T1G-ND |
| Manufacturer Part#: |
NSVMUN5137DW1T1G |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS 2PNP PREBIAS 0.25W SC88 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
| DataSheet: |  NSVMUN5137DW1T1G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.06371 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | -- |
| Power - Max: | 250mW |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Description
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NSVMUN5137DW1T1G is a pre-biased version of NPN Silicon Device Arrays developed by Toshiba. This device is primarily used to provide superior performance and easy-to-use control in many applications, such as switching and power supply control.The NSVMUN5137DW1T1G consists of a single unit array of 16 NPN Silicon Devices, each with a voltage rating of 500V and a maximum current rating of 200mA. The device is constructed in a dual-in-line (DIP) package, which provides good heat dissipation and enables the device to fit easily into various types of circuit boards.The device is pre-biased, which means that each NPN Silicon Device is pre-programmed with the exact settings needed for the application. This makes it easy for engineers to design PCBs with the required components and to have them ready for use quickly.The NSVMUN5137DW1T1G offers superior performance in many applications due to its features like its high current rating, small size, and low voltage drop. The device also has a low start-up current, which makes it ideal for applications that require a rapidly-adjustable current in a very short period of time.From a working principle perspective, the NSVMUN5137DW1T1G consists of an array of NPN Silicon Devices that work together to control the voltage. Each Silicon Device consists of a collector, base and emitter, which are connected in such a way that when a voltage is applied to the device, the current flow can be adjusted easily. By controlling the current flow, the voltage of the phase can be adjusted as desired.The NSVMUN5137DW1T1G can also be used in batteries, brakes and other systems, as well as in motor control applications. In batteries, the device can be used to detect low voltage and ensure that the correct voltage is provided to the cells. In brakes, it ensures that the correct amount of pressure is applied to the brakes. In motors, the device can be used to control the speed of the motor by applying the right amount of voltage.The NSVMUN5137DW1T1G can also be used for a variety of other applications, such as lighting control, audio systems and low voltage control. In lighting control systems, the device is used to regulate the intensity of the lights. In audio systems, it allows for precise control of the sound. And in low voltage control systems, the device can be used to ensure the correct voltages are provided to the device or system.The NSVMUN5137DW1T1G is an ideal choice for applications where high performance, high power efficiency, and ease of use are required. The device’s pre-biased feature, as well as its high current rating, small size, and low voltage drop make it an ideal choice for many applications. With its versatile features and wide range of applications, it is no wonder that the NSVMUN5137DW1T1G is becoming an increasingly popular choice for engineers across the globe.
The specific data is subject to PDF, and the above content is for reference
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