Allicdata Part #: | NSVMMUN2132LT1G-ND |
Manufacturer Part#: |
NSVMMUN2132LT1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSVMMUN2132LT1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03929 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN21**L |
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NSVMMUN2132LT1G application field and working principle
NSVMMUN2132LT1G is a type of transistors known as single, pre-biased, Bipolar Junction Transistors or BJT. It is mainly used in applications where low operating voltage and low signal series provide high speed switching solutions.
This type of transistor is ideal for applications that need to have low signal levels, higher switching speed and reducing the number of driver circuits for high-side and low-side drivers. NSVMMUN2132LT1G transistors can also be used to support devices with different voltage requirements, such as providing isolation between multiple voltage sources.
The working principle of this type of transistor is based on the principle of BJT. It is composed of three terminals, namely the collector, base and emitter. These three contacts are connected by a semiconductor material, usually silicon, to form a one-way valve. This allows current to flow in the forward direction when there is a positive voltage on the base, and the current is blocked in the reverse direction.
Due to their lower power dissipation and cost-effectiveness, they are often preferred by many electronic system designers. Also, the large number of field-effect transistors and bipolar transistors available make this type of transistor very versatile, allowing the designer to design the circuits quickly and easily.
The NSVMMUN2132LT1G transistor provides low on-resistance, which helps to provide high speed switching solutions. It is typically used for high-side and low-side drivers, as well as energy-saving solutions such as LED lighting systems. It is also often used as a board-level switch, allowing a designer to easily switch between different applications and functionally related circuits.
Because of its numerous advantages, NSVMMUN2132LT1G transistors can be found in many different applications. From automotive lighting systems to HVAC systems and home automation devices, the NSVMMUN2132LT1G transistor can be found in nearly every electronics system today.
In conclusion, NSVMMUN2132LT1G transistors are an ideal solution for applications such as automotive lighting systems, HVAC systems, and home automation devices, offering high speed switching solutions, low power dissipation and cost-effectiveness. As with any electronics system, the designer should consider the size of the device, power consumption, and accuracy before making a decision on the type of transistor to use.
The specific data is subject to PDF, and the above content is for reference
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