NSVMSA1162GT1G

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The NSVMSA1162GT1G is an NPN bipolar junction transistor (BJT) from ON Semiconductor. It has a Collector-Emitter Breakdown Voltage of 160 V and Repetitive Avalanche Voltage of 180 V. This device can handle a maximum Collector Current of 600 mA and a maximum Continuous Collector Current of 500 mA. It is available in a small surface-mount package with a Pulse Width of 2.2 us and a Gain Bandwidth Product of 80 MHz.

The primary application for the NSVMSA1162GT1G is in small signal power amplifiers, power switching, and RF amplifiers. It is specifically designed for applications where small size and high frequency performance is required. It is also designed to provide fast switching times, low power dissipation and good linearity.

The NSVMSA1162GT1G works by amplifying an electrical signal by converting AC input power into DC output power, with amplitude, frequency and phase all being controlled by an input signal. It does this by using base current to control the voltage and current of an output signal. The transistor works by a process of energy amplification. As current enters the base, it is amplified by the collector voltage, resulting in an output current at the collector.

The NSVMSA1162GT1G is constructed of three regions, the emitter, collector and base. When a voltage is applied to the base, it creates a small current which controls the larger current between collector and emitter. This is due to the base\'s relatively high resistance. This current remains constant, provided the current entering the base remains within its maximum allowable current limit.

This is a standard single bipolar transistor, often referred to as an NPN BJT. The NPN type refers to the polarities of the three regions, with the N referring to the negative side of the transistor and the P referring to the positive side. The NPN transistor is usually arranged in a common-collector configuration for amplifiers, using DC biasing.

The NSVMSA1162GT1G is built using a silicon die and metal can construction. This type of transistor is well suited for high power applications due to its high collector current and low thermal resistance. It is well suited for applications where small size and high frequency performance are required, such as amplifiers, power switching and RF amplifiers.

The NSVMSA1162GT1G is an ideal choice for a wide range of applications including audio amplifiers, transistor switching circuits, motor control, audio amplifiers, linear power supplies, and other applications in the electronic industry. It is a great choice for those looking for a reliable and cost-effective solution for their applications.

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