NSVMMUN2212LT1G Discrete Semiconductor Products

Resistor - Base (R1):	22 kOhms
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	246mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Resistor - Emitter Base (R2):	22 kOhms
Series:	--
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The NSVMMUN2212LT1G is a single pre-biased bipolar junction transistor, or BJT. This type of transistor is frequently used in high-frequency signal amplification and can be used with a wide range of signal sources. In this article, we will discuss the application field and working principle of the NSVMMUN2212LT1G transistor.The main application of the NSVMMUN2212LT1G is high-frequency signal amplification. This type of transistor is particularly useful for amplifying signals with high frequency content or for applications that require high current handling capability. The NSVMMUN2212LT1G is also capable of generating a high level of stable output power, making it ideal for many electronic applications.The working principle of the NSVMMUN2212LT1G relies on its structure: it consists of three differently doped sections, the base, collector, and emitter. When a voltage is applied to the circuit, the electrons in the emitter move towards the collector, creating a current. The base acts as a gate, controlling the flow of electrons. This type of transistor also features a pre-biased configuration, which means that a small current is applied to the base prior to the application of the voltage. This pre-biasing helps to reduce the distortion in the output signal, allowing for more accurate amplification.The primary benefit of using this type of transistor for high-frequency signal applications is its combination of high gain and high speed. The current flow through the transistor is very fast, allowing for high-speed signal amplification. Additionally, the high gain means that the signal is amplified and de-amplified accurately, resulting in a much cleaner output signal. The NSVMMUN2212LT1G is commonly used in a variety of applications, from radio frequency communication to power amplifiers. This type of transistor is also found in many consumer electronics devices such as television sets, CD players, and amplifiers.In conclusion, the NSVMMUN2212LT1G is a single pre-biased bipolar junction transistor, frequently used for high-frequency signal amplification. This type of transistor features a pre-biased configuration, allowing it to reduce distortion in the output signal. The high gain and high speed of the NSVMMUN2212LT1G make it an ideal choice for many electronic applications.

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