NSVMUN5333DW1T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSVMUN5333DW1T1GOSTR-ND |
Manufacturer Part#: |
NSVMUN5333DW1T1G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVMUN5333DW1T1G Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.02784 |
6000 +: | $ 0.02421 |
15000 +: | $ 0.02058 |
30000 +: | $ 0.01937 |
75000 +: | $ 0.01816 |
150000 +: | $ 0.01614 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN53**DW1 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NSVMUN5333DW1T1G, part of the family of pre-biased transistor arrays, is a type of integrated circuit (IC) that features a pair of n-channel enhancement mode MOSFET transistors in a SOT-363 small outline package. As one of the smallest pre-biased transistor array packages, the device has a height of 0.9mm, is leadfree and can be used across a range of power supply voltages. It is also RoHS compliant, making it an ideal choice for a variety of applications.
The NSVMUN5333DW1T1G contains two N-channel MOSFETs, each with independent pins for the source and drain pin, as well as a common gate pin. Each MOSFET is pre-biased to ensure that it can be operated with a lower on-state power dissipation when compared to un-biased transistors. Additionally, the device is manufactured using the latest in advanced process technology to ensure optimum performance and reliability.
The pre-biased transistor array technology makes the NSVMUN5333DW1T1G well-suited for a variety of applications, from motor control and DC-DC converters to digital logic circuits and power management circuits. This device can also be used for switching and driving loads as well as for interfacing with higher voltage devices. Due to its low on-resistance and low gate charge, the NSVMUN5333DW1T1G is capable of providing higher switching frequency, which makes it ideal for high-frequency applications.
The working principle of the NSVMUN5333DW1T1G is relatively simple. When a voltage is applied to the gate pin, the voltage force electrons in the channel. This creates a depletion region in the channel which reduces the channel’s resistance, allowing current to flow through the channel. This current is then carried by the drain and source pins, thus switching or driving the load.
Furthermore, the pre-biased nature of the NSVMUN5333DW1T1G allows for an efficient and easy gate drive signal operation that can reduce the size of the circuit compared to traditional solutions. As such, the NSVMUN5333DW1T1G is an ideal choice for cost-sensitive applications that require a high level of performance and reliability.
As a pre-biased transistor array, the NSVMUN5333DW1T1G is capable of offering a wide range of advantages over other solutions. Its low on-state power dissipation, advanced process technology, and high switching frequency make it the perfect choice for applications that require the highest level of performance with the highest level of reliability. Thanks to its small size, cost savings, and ease of use, this device is a popular choice for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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