NSVMMBT2907AWT1G Discrete Semiconductor Products

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The NSVMMBT2907AWT1G is a single bipolar junction transistor (BJT). It comes in a TO-92 package, and its collector current rating is 500 mA with a voltage drop of 40V. The collector-base voltage rating is 300V. This device is designed to provide a controlled current flow between its collector and emitter terminals.

The NSVMMBT2907AWT1G is a general-purpose amplifier transistor typically used in medium-power applications such as audio amplifiers, low-frequency signal processing circuits, switching, and digital logic gates. It is ideal for low-noise designs requiring less power consumption, due to the device’s relatively low gain-bandwidth product.

Bipolar transistors work by creating a barrier between the base region and the collector and emitter regions, allowing them to act as a switch. The NSVMMBT2907AWT1G utilizes this basic principle to effectively control a current flow between its collector and emitter.

When the base voltage is increased above the emitter voltage, the collector current increases, as current flows through the emitter-base junction. This current then passes through the collector-base junction. The collector current is proportional to the base current. As long as the base voltage remains above the emitter voltage, the collector current will remain at the value it was set to. The device can be used in various applications, such as amplifying AC signals or switching large currents, among others.

The NSVMMBT2907AWT1G transistor is also well-suited for operating in high-temperature environments, as it can withstand temperatures up to 175°C. Additionally, it also features high-speed switching and excellent gain linearity. It is also rated for 400V of isolation between collector and base and 100V of isolation between collector and emitter.

To sum up, the NSVMMBT2907AWT1G is a single bipolar junction transistor (BJT) with a TO-92 form factor and excellent temperature and speed ratings. It is ideally suited for audio amplifiers, low-frequency signal processing circuits, switching, and digital logic gates. The device provides excellent gain linearity and can be used in various applications.

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