| Allicdata Part #: | NSVMSB1218A-RT1G-ND |
| Manufacturer Part#: |
NSVMSB1218A-RT1G |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP BIPOLAR SOT323-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 150mW Surf... |
| DataSheet: |  NSVMSB1218A-RT1G Datasheet/PDF |
| Quantity: | 1000 |
| 9000 +: | $ 0.03202 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 45V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 210 @ 2mA, 10V |
| Power - Max: | 150mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SC-70-3 (SOT323) |
Description
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Introduction
NSVMSB1218A-RT1G is a single bipolar junction transistor (BJT) type terminal block with a rated current of 1 amp. It is designed for use in a wide range of electronic applications, including power electronic systems, motor control, solar inverters, and amplifier stages. The NSVMSB1218A-RT1G is a compact, low-profile terminal block, which offers high thermal and electrical performance.
Applications
The NSVMSB1218A-RT1G is suitable for use in applications where a high current rating is required, such as power electronic systems, motor control, solar inverters, and amplifier stages. It is also suitable for applications requiring high voltage and current levels. The NSVMSB1218A-RT1G has a low thermal resistance, which makes it suitable for high-temperature applications. Additionally, the terminal block is designed to be corrosion-resistant and has a UL 94V-0 rating.
Working Principle
The NSVMSB1218A-RT1G is a device that is used to control the flow of electric current between two points in an electric circuit. It works by applying a voltage to the base of the transistor, which is then amplified by the current that is flowing through the collector and emitter. This amplifies the voltage and increases the current, thus controlling the flow of current.
The transistor is comprised of three layers sandwiched together, the base (B), collector (C), and the emitter (E). A base-emitter junction controls the current flow through the transistor, while the collector serves as a path for the current to flow. The base voltage is controlled by the gate voltage and is what determines the current gain through the transistor.
The NSVMSB1218A-RT1G can be used as a switch, amplifier, or as a voltage regulator, depending on the specific needs of the application. When used as a switch, the control voltage is used to turn the transistor on or off. When used as an amplifier, the base-emitter voltage is used to control the current gain of the transistor. When used as a voltage regulator, the collector current is used to regulate the output voltage.
Conclusion
The NSVMSB1218A-RT1G is a single bipolar junction transistor terminal block with a rated current of 1 amp. It is designed for use in a wide range of electronic applications and offers high thermal and electrical performance. The NSVMSB1218A-RT1G can be used as a switch, amplifier, or as a voltage regulator, depending on the specific needs of the application.
NSVMSB1218A-RT1G is a single bipolar junction transistor (BJT) type terminal block with a rated current of 1 amp. It is designed for use in a wide range of electronic applications, including power electronic systems, motor control, solar inverters, and amplifier stages. The NSVMSB1218A-RT1G is a compact, low-profile terminal block, which offers high thermal and electrical performance.
Applications
The NSVMSB1218A-RT1G is suitable for use in applications where a high current rating is required, such as power electronic systems, motor control, solar inverters, and amplifier stages. It is also suitable for applications requiring high voltage and current levels. The NSVMSB1218A-RT1G has a low thermal resistance, which makes it suitable for high-temperature applications. Additionally, the terminal block is designed to be corrosion-resistant and has a UL 94V-0 rating.
Working Principle
The NSVMSB1218A-RT1G is a device that is used to control the flow of electric current between two points in an electric circuit. It works by applying a voltage to the base of the transistor, which is then amplified by the current that is flowing through the collector and emitter. This amplifies the voltage and increases the current, thus controlling the flow of current.
The transistor is comprised of three layers sandwiched together, the base (B), collector (C), and the emitter (E). A base-emitter junction controls the current flow through the transistor, while the collector serves as a path for the current to flow. The base voltage is controlled by the gate voltage and is what determines the current gain through the transistor.
The NSVMSB1218A-RT1G can be used as a switch, amplifier, or as a voltage regulator, depending on the specific needs of the application. When used as a switch, the control voltage is used to turn the transistor on or off. When used as an amplifier, the base-emitter voltage is used to control the current gain of the transistor. When used as a voltage regulator, the collector current is used to regulate the output voltage.
Conclusion
The NSVMSB1218A-RT1G is a single bipolar junction transistor terminal block with a rated current of 1 amp. It is designed for use in a wide range of electronic applications and offers high thermal and electrical performance. The NSVMSB1218A-RT1G can be used as a switch, amplifier, or as a voltage regulator, depending on the specific needs of the application.
The specific data is subject to PDF, and the above content is for reference
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