NSVMMBT5401LT3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A transistor is an electrical component that consists of two terminals separated by an epitaxial layer of semiconductor material. The NSVMMBT5401LT3G is a single-gate, NPN, bipolar junction transistor (BJT) developed by NDS Semiconductor. This transistor is designed for use in high-voltage applications with a wide range of operating temperatures from -40°C to +150°C. The NSVMMBT5401LT3G is widely used in commercial and industrial applications for amplifying or switching electronic signals.

The NSVMMBT5401LT3G is a silicon-based device with an emitter area of 1.5mm and a collector area of 1.25mm, making it among the most power-efficient BJTs available. It offers low On-state resistance, high-frequency capability and high-power switching performance, making it suitable for a variety of tasks in industrial, automotive and consumer electronics. The device is also highly durable, with a maximum collector-emitter breakdown voltage of 800V and a maximum storage temperature of +150°C.

The NSVMMBT5401LT3G is a complex device that functions on three basic principles to generate, control and amplify electrical signals. The first principle is the transfer of electrons, which is the movement of electrons from the emitter to the collector. This is achieved through the application of a voltage across the base-emitter junction, which creates an electric field that accelerates the electrons. The second principle is the amplification of current, which is achieved by the application of a voltage across the base-collector junction. This results in a large increase in current between the collector and the emitter. The third principle is the control of current, which is achieved by varying the applied base-emitter junction voltage.

The NSVMMBT5401LT3G is commonly used in switching circuits and can be used to control the flow of current between two points. It is also used in amplifier and radio circuits, where it is used to amplify sound signals or incoming radio signals. This transistor is also used in audio amplifiers, where it is used to amplify and control sound signals, and also as a power amplifier for low-power audio signals. Other applications include power supplies, motor control, temperature control and solenoid control.

In summary, the NSVMMBT5401LT3G is an NPN, bipolar junction transistor (BJT) designed for high-voltage applications, offering an impressive combination of reliability, durability, low On-state resistance, and high-frequency capability. It functions according to three basic principles, the transfer of electrons, the amplification of current, and the control of current, making it suitable for a variety of tasks in industrial, automotive and consumer electronics. It is commonly used in applications such as switching circuits, audio amplifiers, power supplies, motor control, temperature control and solenoid control.

The specific data is subject to PDF, and the above content is for reference