NSVMUN5131T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	202mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70-3 (SOT323)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<p>The NSVMUN5131T1G is a single pre-biased bipolar transistor. It features an NPN configuration in an ultra-small SOT-323 package. The device is ideal for use in applications such as switching, amplifying and level shifting. Typical applications include pre-biased LED drivers, voltage amplifiers and optical encoding circuits.</p><p>The transistor is based on the Bipolar Junction Transistor (BJT) principle. BJTs are three-terminal solid state devices that can control the current in one direction by applying a control current or voltage at the third terminal. A BJT is typically composed of two P-N junction semiconductor regions, the base-emitter junction and the collector-base junction, which are separated by an intrinsic semiconductor layer called the base region.</p><p>The NSVMUN5131T1G transistor features a built-in bias resistor, allowing for the device to be used in various pre-biased configurations. This makes the device ideal for use in LED drivers, voltage amplifiers and optical encoding circuits, where a pre-biased configuration may be desirable.</p><p>The transistor is also capable of operating at a wide range of collector currents. The device features a high gain bandwidth product of 1.4 GHz and a low standby current of 0.15 uA. As such, it is suited for operation in switching and level-shifting applications.</p><p>In addition to its operating performance, the NSVMUN5131T1G is also designed for superior surface mount device reliability. The device is offered with a guaranteed total leakage current of 0.5 uA (at 125°C junction temperature) and a guaranteed maximum on-state resistance of 6 mΩ (at 30°C junction temperature).</p><p>To sum up, the NSVMUN5131T1G is a pre-biased single NPN bipolar transistor offered in a tiny SOT-323 package, which is well-suited for use in various applications where a pre-biased configuration is desirable. The device features excellent performance and reliability, making it an ideal solution for LED drivers, voltage amplifiers, optical encoding circuits, switching and level-shifting applications.</p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description