Allicdata Part #: | NSVMMUN2135LT1G-ND |
Manufacturer Part#: |
NSVMMUN2135LT1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP BIPO 50V SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSVMMUN2135LT1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.04322 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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NSVMMUN2135LT1G Application Field and Working Principle
NSVMMUN2135LT1G, or also known as a pre-biased Single Bipolar Transistor (BJT), is a three-lead semiconductor device that consists of two PN (positive-negative) junctions. As a member of the “single, pre-biased” family, it is highly preferred in a wide range of applications due to its pro-level features, including high current and power ratings, excellent frequency response, and increased temperature stability.
In essence, the main purpose of a pre-biased Single Bipolar Transistor is to act as a current switch that can turn on/off a load circuit. This is done via a specific current gain factor, or “Beta”, which is greater than unity. This device is particularly advantageous since it can switch currents on and off in response to a continuous range of input signals without the use of an extra bias current, making it especially suited for linear amplification.
The actual working principle of a pre-biased Single Bipolar Transistor begins with the source and drain terminals. When a positive voltage is applied to the base or gate, the transistor goes into conduction and a current “flows” from the source to the drain terminal. This “forward biasing” of the PN junction between the base and collector allows electrons to easily flow from the source to the drain, and this current is multiplied by the Beta factor to create the larger current between the collector and emitter.
In this way, the NSVMMUN2135LT1G can act as a current amplifier, allowing it to control a large current with a small current when used as an active device. This makes it ideal for use in applications that require accuracy, repeatability, and stability.
The NSVMMUN2135LT1G is widely used in a variety of applications. Some of the most common uses include power management, electric motor control, light dimmers, and class-D amplifier applications. Its versatility and superior performance have made it one of the top choices for widely used and reliable electrical components.
In conclusion, the NSVMMUN2135LT1G is an incredibly versatile, reliable, and powerful pre-biased single bipolar transistor. Its diverse range of applications and its exceptional temperature stability makes it a favorite for many different power management and amplification applications. With its excellent frequency response, it is designed to not only improve accuracy, but to also increase efficiency and extend the operational lifetime of the devicvle.
The specific data is subject to PDF, and the above content is for reference
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