NTD80N02T4G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2600pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	5.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	24V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NTD80N02T4G is a type of single drain N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high-voltage, high-current and low-power applications. It is widely used in military and space industry, as well as in industrial automation, medical equipment, and consumer applications.The main principle behind MOSFETs is that the voltage on the control gate (CG) will influence the current flow through the channel between the drain (D) and the source (S). When the gate voltage is increased, the current through channel will increase. When the gate voltage is decreased, the current through channel will decrease. In this way, the transistor behaves like a switch, allowing the current to be controlled with the gate voltage.The NTD80N02T4G is a low-power MOSFET that is mainly used as a switch. It has a maximal drain current of up to 80 amps, and a breakdown voltage of up to 200 volts, thus making it suitable for high current and voltage applications. Its low gate threshold voltage and small on-resistance (Rdson)make it suitable for both high-speed and low-power applications.When used as a switch, the NTD80N02T4G will allow current to flow from the drain source when a gate voltage is applied. The current can be controlled by varying the gate voltage, which will either increase or decrease the current flow, depending on the polarity of the gate voltage. The NTD90N02T4G also has an extremely low on-resistance of up to 7.5 milliohms in the linear region. This is due to the fact that the MOSFET only has a single gate and therefore has no need for a wire contact between the gate and the source. This reduces the amount of series resistance and makes it suitable for high frequency power switching applications.The NTD90N02T4G is commonly used in military and space industry applications where high-voltage, high-current, and low-power are necessary for the application. It is also used in industrial automation and medical equipment, as well as consumer electronics such as light dimmers and power converters.In summary, the NTD90N02T4G is a single drain N-Channel MOSFET that is suitable for high-voltage, high-current, and low-power applications. It is capable of switching large amounts of current with only a small amount of gate voltage, and has a low on-resistance, making it suitable for high frequency power switching applications. The NTD90N02T4G is commonly used in the military and space industry, as well as in industrial automation, medical equipment, and consumer applications.

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