NTD85N02RT4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTD85N02RT4 is an enhancement mode transistor of the power MOSFET family. This type of MOSFET is designed specifically for applications such as load switch, level shifter, and power supply design. It is also suitable for applications in the automotive and industrial sectors. The NTD85N02RT4 is composed of a power MOSFET in a planar technology and is offered in single-ended packages. This type of MOSFET is suitable for bridged, inverter, and high power AC/DC power supplies and polynomial motor drives.

The NTD85N02RT4 is an ideal choice for use in systems where power efficiency is important. It features very low on-resistance, excellent thermal performance, and a low gate-charge that allows for efficient operation. It also features an integrated ESD protection circuit which makes it suitable for high voltage protection, in addition to meeting the UL1577 standard. The NTD85N02RT4 utilizes a planar double-diffused MOS (DMOS) technology which is designed to dissipate power effectively in a very small footprint.

The NTD85N02RT4 is a power MOSFET that works on the principle of a voltage-controlled field-effect transistor (FET). This type of transistor uses an electric field to control the movement of current through it. The gate of the transistor is used to control the current that flows through the device by adjusting the voltage applied to the gate. The gate is treated as a capacitor, so the current is proportional to the voltage applied. When the gate is opened, the current will flow through the channel and the transistor will become an “on” state and the gate voltage will drop. When the gate is closed, the current will stop flowing and the transistor will be in an “off” state. The performance of a power MOSFET is usually characterized by the so called drain-source breakdown voltage, which is the maximum steady-state DC bias voltage, across the drain-source terminal, with all other terminals open.

In conclusion, the NTD85N02RT4 is an ideal choice for a variety of applications, such as load switching, level shifting, and power supply design. It features extremely low on-resistance, superior thermal performance, and an integrated ESD protection circuit that makes it suitable for high voltage protection. It is based on the principle of the FET, which uses an electric field to control the flow of current through the device. It has the advantage of operating in an efficient, small footprint and is capable of dissipating power effectively. The NTD85N02RT4 is a reliable and powerful choice for various industrial, automotive, and power supply design needs.

The specific data is subject to PDF, and the above content is for reference