NTD85N02R-001

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.25W (Ta), 78.1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2050pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17.7nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	5.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss):	24V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The NTD85N02R-001 is a single P-channel field-effect transistor (FET) that belongs to the cMOS logic family. It is designed for use in low voltage, low power applications, with a minimum operating voltage of 0.9V and a maximum of 5.5V. The device can perform various functions such as simple switches, current sources, and level shifters. It is also capable of efficiently amplifying and switching low-level signals.The NTD85N02R-001 is an enhancement-mode FET, which means it has a voltage regulator to ensure that the drain-to-source voltage (VDS) never gets above the gate-to-source voltage (VGS). This prevents VGS from getting too high, which would damage the FET. The FET also contains an internal body diode which prevents it from conducting current when the drain-to-source voltage is reversed.The NTD85N02R-001 has a continuous drain current rating of 0.85A and a maximum drain current of 8A. The RDS(on) value is the resistance between the drain and source when the FET is on, and this is typically 4.2ohm. The FET can also handle high frequency pulses up to 500MHz with a minimum pulse width of 250ns.The NTD85N02R-001 is a versatile device and is suitable for a wide array of applications. It can be used as a switch in automotive, audio, and medical applications. It is often used to control the flow of current in power management systems. Additionally, it can be used as a signal amplifier in broadcast radio and as a level shifter in digital circuits. Additionally, the FET can be used in voltage regulation circuits and Li-ion battery protection. The NTD85N02R-001 is designed to provide enhanced switching performance and reliability. The device offers low capacitance and low on-resistance for better power efficiency and signal integrity. It also has excellent temperature and electrical stability, ensuring reliable performance over long operating durations. The FET is resistant to electro-static discharges, making it suitable for use in sensitive electronic circuits.Overall, the NTD85N02R-001 is an excellent choice for use in low voltage, low power applications. It is well suited for applications that require excellent switching performance and reliability, while also offering enhanced power efficiency and signal integrity.

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