NTD85N02RT4G Discrete Semiconductor Products

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NTD85N02RT4G is a fantastic single-channel enhancement-mode n-type MOSFET (metal-oxide-semiconductor field effect transistor). It has been developed to meet the requirements of various applications in the market such as industrial and commercial applications, communications, power management, automotive and consumer electronics. This MOSFET is designed to offer high-speed switching performance with low gate charge and fast output characteristics.

NTD85N02RT4G has a maximum drain to source voltage of 20V, drain current of 4A and drain to source on-state resistane of 0.015 ohms. It is designed to tolerate up to 100V gate to source voltage, has an incredibly low gate charge of 0.84nC and offers an impressive transition frequency of 12MHz. It also features exceptional ESD protection up to greater than 4000V, which makes it a reliable and robust choice for most applications.

The working principle of the NTD85N02RT4G MOSFET is simple and effective. When a voltage is applied to the gate terminal, it turns the transistor on and connects the gate to the source. This enables current to flow from the drain to the source, and the transistor functions as an amplifier or switch. When the gate is no longer charged, no current flows and the transistor switches off.

NTD85N02RT4G has a wide range of applications. It is used in motor control, switching power supplies, lighting control and motor inverters. It can also be used in computer motherboards, audio amplifiers and digital signal processors. This MOVFET is also an ideal choice for mobile devices, as it is well capable of handling the low power and high speed that is required. As its low gate charge and fast output characteristics make it highly efficient, NTD85N02RT4G is easily suitable for applications where size and heat dissipation are important factors that cannot be overlooked.

In conclusion, NTD85N02RT4G is a perfect choice for a wide range of applications. Its low gate charge and fast output characteristics make it highly efficient, and its high-speed switching performance and ESD protection make it reliable and robust. It is an excellent choice for applications where size and heat dissipation are important factors.

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