| Allicdata Part #: | NTD85N02R-1G-ND |
| Manufacturer Part#: |
NTD85N02R-1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 24V 12A IPAK |
| More Detail: | N-Channel 24V 12A (Ta), 85A (Tc) 1.25W (Ta), 78.1W... |
| DataSheet: |  NTD85N02R-1G Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta), 78.1W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17.7nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 85A (Tc) |
| Drain to Source Voltage (Vdss): | 24V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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NTD85N02R-1G is a single-NMOS transistor, which is suitable for applications with high current and voltage. Its features include low on-state resistance, good thermal performance, high frequency operation, and low gate capacitance. The device also has a built-in Schottky diode for circuit protection.
The NTD85N02R-1G is a depletion-mode device, which means it will operate as a switch when an input signal is applied to its gate. The application field of this device is mainly in the automotive industry. It can be used in powertrains, converters, lighting systems, and alternators, among others.
The working principle of NTD85N02R-1G is based on the MOS technology, which uses a combination of a metal oxide semiconductor and a field effect transistor to control current flow. When a voltage is applied to the gate, it creates an electric field, which attracts electrons from the source to the drain. This current flow can be used to switch an electrical signal or for protection against over-current and over-voltage.
The NTD85N02R-1G is usually used together with other components in order to ensure the voltage and current levels. It is often connected in parallel with other transistors to increase the device\'s current capacity. The drain-source voltage should not exceed 100 volts, and the temperature should not exceed 125°C.
The device has a large gate capacitance, which makes it suitable for high frequency operations. It also has a low on-state resistance, which helps to reduce power dissipation. This makes it ideal for applications where energy efficiency is important.
In summary, the NTD85N02R-1G is a single-NMOS transistor, which is suitable for applications with high current and voltage in the automotive industry. It is based on MOS technology, and its working principle is based on the electric field created by the gate. The device has a large gate capacitance, low on-state resistance, and good thermal performance, which makes it suitable for many automotive applications.
The specific data is subject to PDF, and the above content is for reference
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