NTP5411NG Allicdata Electronics
Allicdata Part #:

NTP5411NG-ND

Manufacturer Part#:

NTP5411NG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 80A TO-220AB
More Detail: N-Channel 60V 80A (Tc) 166W (Tc) Through Hole TO-2...
DataSheet: NTP5411NG datasheetNTP5411NG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTP5411NG MOSFET is a high power MOSFET with N channel enhancement mode, which is a type of field-effect transistor (FET). Usually, a device of this type is used as a power switch, or a voltage regulator, due to its impressive power dissipation capability.

The 5411NG is designed using a much thinner gate oxide layer and source/ drain diffusion regions of 4.9 ohms, making it highly suitable for high current applications and fast switching operations. Furthermore, it is capable of withstanding and conducting high levels of current and voltage in both the on and off states.

The advantage that this type of MOSFET brings is its enlarged heat sink, which helps reduce the junction temperature and improves thermal management. As a result, more power can be efficiently provided by the device. Its other advantages include its low on-resistance and ESD protection, which provides reliable and robust operation.

The NTP5411NG MOSFET is often used in a variety of high voltage and high current applications. Common applications are power switch circuits, motor control switching, battery management, amplifier and clock circuits, and inverter control. Additionally, it can be applied to gate drivers, power supply control, and voltage step-up circuits.

The working principle of the NTP5411NG MOSFET is similar to conventional FETs. It works by allowing a controlled current to pass through the device when a voltage is applied to electrodes. The current is controlled by the gate--the higher the gate voltage, the higher the current flowing through the device. When the gate voltage is 0, then the transistor is in the off state and the current is cut off.

The only difference between the NTP5411NG and conventional FETs is its construction. The NTP5411NG has a much thinner gate oxide layer, which allows for more efficient operation and higher switching speeds. This is beneficial for applications that require a fast response time.

In conclusion, the NTP5411NG is a high power MOSFET built on a thinner gate oxide layer. Its enlarged heat sink helps reduce its junction temperature, while its low on-resistance and ESD protection give the device reliable and robust operation. The NTP5411NG can be used in a variety of applications including power switch circuits, motor control switchings, battery management, amplifier and clock circuits, and inverter control.

The specific data is subject to PDF, and the above content is for reference

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