Allicdata Part #: | NTP5864NGOS-ND |
Manufacturer Part#: |
NTP5864NG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 63A TO-220 |
More Detail: | N-Channel 60V 63A (Tc) 107W (Tc) Through Hole TO-2... |
DataSheet: | NTP5864NG Datasheet/PDF |
Quantity: | 1106 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 63A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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NTP5864NG is a single P-channel enhancement-mode MOSFET with remarkable performance and environment friendly properties. It has a small and low-dissipative package, making it ideal for applications such as high-frequency switching, high-speed digital and analog circuits, and low-power lighting systems. It is also applicable to other high-voltage/temperature applications where low threshold voltage, low on-resistance, low gate charge, and improved operating temperature range are needed.
The NTP5864NG is composed of a source, drain, and gate electrodes. It has a P-type carrier majority and the source is connected to the positive power supply while the gate is connected to a control voltage. It features an insulated gate, which when voltage is applied to the gate, modifies the electrical conductance through the device between source and drain. This feature makes the device highly controllable making it ideal as a switching device.
The operating principle of the NTP5864NG is based on the MOSFET or Metal Oxide Semiconductor Field Effect Transistor. It is the most widely used type of transistor and is the basis for practically all modern electronics. A MOSFET consists of a channel of conducting material between a source and a drain, with a thin insulation layer between them. Gate voltage applied to the channel modifies the conductance through the channel resulting in electrical control of the currents between source and drain with minimum power consumption.
NTP5864NG’s low threshold voltage and high transconductance make it suitable for many high-frequency and high-speed digital and analog applications. It is designed to handle high-temperature applications as well as low-power lighting systems. It features an ultra-low On-resistance when compared to other similar MOSFET Field Effect Transistors, making it ideal for a vast array of applications.
The NTP5864NG has a wide range of application fields and can be used in a variety of industrial and consumer applications. It is mainly used in high-speed logic circuits, high-frequency switching, converters, and power amplifiers. It is also used as a load switch in automotive, industrial and consumer systems, such as DC/DC converters, notebooks computers, and mobile phones. In addition, the NTP5864NG can also be used in low power lighting systems, power supplies, and power management units. These applications require the device to change its On-resistance in response to changes in temperature, input voltage, and other conditions.
In conclusion, the NTP5864NG is a single P-channel enhancement-mode MOSFET with remarkable performance and environment friendly properties. Its low threshold voltage and high transconductance make it suitable for many high-frequency and high-speed applications including digital and analog circuits, power supplies, and power management units. This device is also suitable for low-power lighting systems, automotive, industrial and consumer systems, and DC/DC converters. The NTP5864NG can also be used in notebooks computers and mobile phones as a load switch. It has an insulated gate which allows for controlled conduction between the source and drain when voltage is applied, making it an ideal choice for high-temperature and high-voltage applications where low threshold voltage, low on-resistance and improved operating temperature range are needed.
The specific data is subject to PDF, and the above content is for reference
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