NTP5863NG

NTP5863NG is a type of monolithic MOSFET integrated circuit, developed and manufactured by NXP Semiconductors of Netherlands. It is characterized by high speed switching, low voltage drop and low quiescent current.The NTP5863NG is a N–channel enhancement mode MOSFET which has a voltage rating of 33V and a power rating of 11W (200mA). It has a maximum gate threshold voltage of 0.8V and a turn-on delay time of 0.3µs. The total gate charge of this MOSFET is 27nC and the on-state resistance is 26mΩ.The application field of the NTP5863NG is broad. This MOSFET has been used in mobile phone power amplifiers, motor drivers, switching power supplies, DC–DC converters, high speed data acquisition systems and other digital circuits.The working principle of the NTP5863NG is based on the fact that it is a metal–oxide–semiconductor field-effect transistor (MOSFET). In this type of transistor, the gate electrode is insulated from the channel by a metal–oxide layer. The transistor has two types of regions – the channel region and the field region. In the channel region, the electric field due to the presence of the gate voltage attracts free electrons towards the channel region and thus forms an “inversion layer” in the channel region. This layer of inversion channels serves as the conduction path between the source and the drain electrodes and thus a current can flow through the device.When a voltage is applied to the gate of a MOSFET through a control voltage, the electric field between the gate and the channel is increased, which causes the electrons to migrate from the channel region to the gate region. This causes a decrease in the current between the source and the drain terminals and the device is said to be in a “cutoff” state. On the other hand, when the control voltage is decreased, the electric field between the gate and the channel is decreased, which causes the electrons to migrate from the gate region to the channel region. This causes an increase in the current between the source and the drain terminals, and the device is said to be in an “on” state.The NTP5863NG is characterized by its fast switching speed, low voltage drop and low quiescent current. It is suitable for applications that require high speed switching, low power consumption and lower power losses.

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NTP5863NG	ON Semicondu...	--	1000	MOSFET N-CH 60V 97A TO-22...
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