NTP5860NLG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	283W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10760pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	180nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	220A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTP5860NLG Application Field and Working Principle

The NTP5860NLG is a type of transistor, more specifically an enhancement type single N-channel MOSFET. As a transistor, the NTP5860NLG can be used for many applications such as low voltage power supplies, lighting, switching, and so on. The device is particularly well-suited for applications that require low on-state resistance and fast switching.The NTP5860NLG is a MOSFET, or a metal-oxide-semiconductor field-effect transistor. While it has many similarities to the traditional bipolar junction transistor, MOSFETs are distinguished by their much higher performance, lower bias requirements, and lower power consumption. Generally, MOSFETs are also much more resistant to breakdown than their BJT counterparts.The NTP5860NLG is a single N-channel MOSFET and does not require any additional components, such as a gate resistor or a bias voltage, for operation. The device is designed for use in both high and low voltage circuits, and can operate between -55°C and 150°C junction temperatures. One of the main advantages of the NTP5860NLG is its low on-state resistance or RDS(on). This parameter is a measure of the power dissipated when the channel is turned on. The lower the RDS(on), the higher the switching speed, and the better the performance of the circuit. In the case of the NTP5860NLG, its RDS(on) is just 0.0065 Ω at 10V drain-source voltage.The NTP5860NLG is also equipped with several protection features. This includes a built-in diode, which permits operation with voltages up to 30V, and a drain-source diode which prevents reverse voltages from damaging the device. The device also has thermal protection, which shuts off the power supply when the internal temperature reaches a certain threshold.In conclusion, the NTP5860NLG is an inherently safe and efficient MOSFET transistor that can be used for many applications. Its low RDS(on) and high operational temperature makes it well-suited for low voltage power supplies and switching. Along with its built-in protection features, the NTP5860NLG can make for a cost-efficient and reliable solution for many applications.

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