Allicdata Part #: | NTP5860NG-ND |
Manufacturer Part#: |
NTP5860NG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 220A TO-220-3 |
More Detail: | N-Channel 60V 220A (Tc) 283W (Tc) Through Hole TO-... |
DataSheet: | NTP5860NG Datasheet/PDF |
Quantity: | 150 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 283W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10760pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTP5860NG is an advanced N-Channel Enhanced Silicon MOSFET (MOS Enhanced Transistor). It features fast switching, low gate charge, low RDS(ON) and high avalanche energy (EA) rating, making it a great choice in various applications. It offers versatile features such as low On-State resistance which helps reduce power loss, and its optimized gate charge helps reduce gate resistance. This makes it an ideal candidate for high current switching applications. Additionally, it is RoHS compliant and its high temperature operating range makes it suitable for many different types of applications.
The NTP5860NG has a built in electrostatic protection feature which reduces short-circuit and reverse-voltage damage. Additionally, it has a high current carrying capacity and can handle a maximum drain current of up to 12 A, making it suitable for a wide range of applications. The NTP5860NG can operate at gate voltages between -20V and +12V and drain voltages of up to +55V making it an ideal solution for switching applications in the automotive, industrial, telecom and consumer markets.
The NTP5860NG features an optimized gate charge and has a low On-State Resistance (RDS(On)). This allows the transistor to achieve high speeds of switching even at relatively low current levels and reduces conduction losses. The optimized gate charge also helps to reduce switching losses, as it requires less energy to transition the transistor from “off” to “on”. Additionally, this device features a low thermal resistance between the drain and the source, allowing it to efficiently dissipate heat when operating in high power applications.
The NTP5860NG is a great choice for a wide variety of applications. It is ideal for high frequency switching applications, such as motor drivers, power converters and automotive electronics. Additionally, it can be used for light loads and low current circuits, as it has a low gate charge and low RDS(On). It can also be used for power management applications, such as voltage and current regulators, as it is capable of handling high current levels. Additionally, it is a great choice for high voltage motor control and can be used to control motors in appliances, robotics, IT equipment and other industrial applications.
In conclusion, the NTP5860NG is an ideal choice for a wide range of applications due to its low On-State Resistance, optimized gate charge, high current capacity and wide temperature range. Its high voltage capability, low gate charge and low On-state Resistance make it a great choice for industrial, automotive, telecom and consumer applications, as well as high current switching applications. Additionally, its protection features allow it to handle a high current, while its electrostatic protection helps protect it from damage due to short-circuits or reverse voltages. Therefore, the NTP5860NG is an ideal choice for a wide range of applications where power, performance and reliability are essential.
The specific data is subject to PDF, and the above content is for reference
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