Allicdata Part #: | NVD6414ANT4G-VF01-ND |
Manufacturer Part#: |
NVD6414ANT4G-VF01 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 34A DPAK |
More Detail: | N-Channel 100V 32A (Tc) 100W (Tc) Surface Mount DP... |
DataSheet: | NVD6414ANT4G-VF01 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.37123 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 32A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVD6414ANT4G-VF01 is a Transistors-FETs, MOSFETs-Single device employed in various applications. This device is most commonly utilized in high density link chipsets, and its performance is good enough to drive a variety of signal paths. It has a high power rating and a wide range of available current ratings. The NVD6414ANT4G-VF01 is a versatile device that is easily adjustable with the proper software. The power rating is referenced in amperes (A) from 0 to 4.5A.
The NVD6414ANT4G-VF01 is a high-speed, low-power switching device. It uses the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) technology to evaluate the gate voltage against the source voltage. When the gate voltage is more positive than the source voltage, a low-resistance field appears in the drain. This device works by controlling the flow of current from the drain to the source by controlling the gate voltage. This capability makes it an ideal choice for use in application fields that require switching with high speed and low-power operations.
The NVD6414ANT4G-VF01 is a superior device in comparison to its predecessors, because it can handle peak currents up to 4.5 A with a power rating of 5 V. Its logic threshold voltage is 5.8 V and its drain-source breakdown voltage is 55 V. Its maximum power dissipation is 288 W and its junction temperature ranges from -55°C to 150°C. This makes it suitable for a range of applications, including high-density link chipsets.
The NVD6414ANT4G-VF01 has a wide range of applications. It is often used in applications that require switching with high speed and low-power operations. It can be utilized in automotive electronics, consumer electronics, and industrial control and automation. It is ideal for applications such as switching power supplies, audio amplifiers, and motor control. It can also be used in the design and development of connected devices, such as wearables and medical implants.
The NVD6414ANT4G-VF01 utilizes a low-frequency back-biased diodes connection, which ensures sufficient negative gate-source Voltage that is required for fast switching and low-dynamic impedance characteristics. It has been tested for superiority and reliability, and has been applied over a wide range of applications. This device is perfect for those who require their electronic devices to operate quietly, facilitate sending and receiving signals, and switch on and off quickly in order to reduce power consumption.
In conclusion, the NVD6414ANT4G-VF01 is an ideal switching device for various applications. It has a wide range of current ratings and a high power rating. It can be used in applications that require switching with high speed and low-power operations. This device is ideal for automotive electronics, consumer electronics, industrial control and automation, and the design and development of connected devices. Its low-frequency back-biased diodes connection ensures satisfactory gate-source Voltage, fast switching, and low-dynamic impedance characteristics. This device is a reliable option for applications that require all of these qualities.
The specific data is subject to PDF, and the above content is for reference
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