NVD6416ANLT4G-VF01 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	71W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	74 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVD6416ANLT4G-VF01 is a high-performance trench-gate field-effect transistor (FET) that is suitable for high-voltage and high-power applications. It has a minimum gate voltage of 16V and maximum drain current of 5A. The device also has a maximum on-state resistance of less than 5 mΩ at 7.3V drain voltage and 0.3A source current. This makes it an ideal choice for high-power and high-frequency applications.The NVD6416ANLT4G-VF01 is manufactured using a process called Nitrogen-Atom-Deposition (NAD). This process allows for the precise localization of nitrogen atoms in the semiconductor wafer, enabling the production of high-density FETs with low on-state resistance. This makes it a reliable choice for power and frequency applications.The NVD6416ANLT4G-VF01 has a wide range of application fields, such as high voltage switching, motor control, high frequency power electronics, and railway traction systems. Its robust design and low on-state resistance make it suitable for these applications. It is also used in high-efficiency power conversion systems and industrial DC motor driver applications.The working principle of the NVD6416ANLT4G-VF01 is based on the principle of a field-effect transistor. A FET is a three-terminal device, comprising a gate (G), a source (S), and a drain (D). Applying a voltage across the gate, source terminal creates an electric field that controls the current in the channel connecting the drain and source. This allows the FET to act as a switch, with the gate controlling the flow of current between the source and the drain.The NVD6416ANLT4G-VF01 has a high voltage tolerance and low on-state resistance, enabling it to handle high power and high frequency applications. The low on-state resistance ensures that current flow is always efficient and not affected by high voltages. The high voltage tolerance ensures that the FET is not damaged by high applied voltages, making it a reliable and durable option.The NVD6416ANLT4G-VF01 is a reliable, high performance device for high-power and high-frequency applications. Its low on-state resistance offers efficient power control, while its high voltage tolerance makes it a robust and reliable option for a wide range of applications. This makes it an ideal choice for industrial and high-frequency power electronics.

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