NVD6824NLT4G-VF01 Discrete Semiconductor Products |
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| Allicdata Part #: | NVD6824NLT4G-VF01OSTR-ND |
| Manufacturer Part#: |
NVD6824NLT4G-VF01 |
| Price: | $ 0.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 40A DPAK |
| More Detail: | N-Channel 100V 8.5A (Ta), 41A (Tc) 3.9W (Ta), 90W ... |
| DataSheet: | NVD6824NLT4G-VF01 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.43200 |
| 10 +: | $ 0.41904 |
| 100 +: | $ 0.41040 |
| 1000 +: | $ 0.40176 |
| 10000 +: | $ 0.38880 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.9W (Ta), 90W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3468pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta), 41A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The NVD6824NLT4G-VF01 is a kind of MOSFET (metal Oxide field effect transistor), and also simply referred to as FET (field effect transistor). It is installed on the single* package, and is usually considered an upgrade of the NVD6821NLT4G-VF01 model. The NVD6824NLT4G-VF01 is made up of a number of parts, including the gate, the drain, the source and the body.
The NVD6824NLT4G-VF01 is primarily used in the commercial and industrial power conversion and switching applications. Its main application is as a power switch, voltage regulator and current controller. As a power switch, it controls the current flow and voltage between two terminals. In the role of voltage regulator, it ensures the voltage supplied from the source is stable. As a current controller, it ensures that the current that is flowing through the circuit is at a reliable level, preventing it from becoming too large and causing damage.
The NVD6824NLT4G-VF01 also has various unique characteristics. It has a very low drain-source On-resistance (down to 27 mohm), making it very suitable for low voltage applications. In addition, it has exceptionally good gate capacitance and gate-source capacitance for fast switching. It also has a very high voltage rating, allowing it to be used in high voltage applications. Finally, it has a high peak current rating, allowing it to handle large current loads with ease.
In terms of its working principle, the NVD6824NLT4G-VF01 is a kind of MOSFET, meaning it has a gate terminal which acts like a switch. The gate terminal can be used to open or close the drain-source path depending on the voltage applied to it. When the voltage is low, the drain-source path is open, allowing current to flow freely through it. When the voltage is high, the drain-source path is closed, effectively blocking off the current flow. This is why it is used as a power switch, current controller, and voltage regulator in applications.
Overall, the NVD6824NLT4G-VF01 is a highly advanced and reliable MOSFET that is primarily used in commercial and industrial power conversion and switching applications. With its low On-resistance, high voltage rating, high peak current rating, and fast switching capabilities, it is a great choice for any application requiring dependable and efficient power control.
The specific data is subject to PDF, and the above content is for reference
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NVD6824NLT4G-VF01 Datasheet/PDF