NVD6824NLT4G-VF01 Allicdata Electronics

NVD6824NLT4G-VF01 Discrete Semiconductor Products

Allicdata Part #:

NVD6824NLT4G-VF01OSTR-ND

Manufacturer Part#:

NVD6824NLT4G-VF01

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 40A DPAK
More Detail: N-Channel 100V 8.5A (Ta), 41A (Tc) 3.9W (Ta), 90W ...
DataSheet: NVD6824NLT4G-VF01 datasheetNVD6824NLT4G-VF01 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.49224
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3468pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 41A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVD6824NLT4G-VF01 is a kind of MOSFET (metal Oxide field effect transistor), and also simply referred to as FET (field effect transistor). It is installed on the single* package, and is usually considered an upgrade of the NVD6821NLT4G-VF01 model. The NVD6824NLT4G-VF01 is made up of a number of parts, including the gate, the drain, the source and the body.

The NVD6824NLT4G-VF01 is primarily used in the commercial and industrial power conversion and switching applications. Its main application is as a power switch, voltage regulator and current controller. As a power switch, it controls the current flow and voltage between two terminals. In the role of voltage regulator, it ensures the voltage supplied from the source is stable. As a current controller, it ensures that the current that is flowing through the circuit is at a reliable level, preventing it from becoming too large and causing damage.

The NVD6824NLT4G-VF01 also has various unique characteristics. It has a very low drain-source On-resistance (down to 27 mohm), making it very suitable for low voltage applications. In addition, it has exceptionally good gate capacitance and gate-source capacitance for fast switching. It also has a very high voltage rating, allowing it to be used in high voltage applications. Finally, it has a high peak current rating, allowing it to handle large current loads with ease.

In terms of its working principle, the NVD6824NLT4G-VF01 is a kind of MOSFET, meaning it has a gate terminal which acts like a switch. The gate terminal can be used to open or close the drain-source path depending on the voltage applied to it. When the voltage is low, the drain-source path is open, allowing current to flow freely through it. When the voltage is high, the drain-source path is closed, effectively blocking off the current flow. This is why it is used as a power switch, current controller, and voltage regulator in applications.

Overall, the NVD6824NLT4G-VF01 is a highly advanced and reliable MOSFET that is primarily used in commercial and industrial power conversion and switching applications. With its low On-resistance, high voltage rating, high peak current rating, and fast switching capabilities, it is a great choice for any application requiring dependable and efficient power control.

The specific data is subject to PDF, and the above content is for reference

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