
Allicdata Part #: | NVD6416ANLT4G-001-ND |
Manufacturer Part#: |
NVD6416ANLT4G-001 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 19A DPAK-3 |
More Detail: | N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.26676 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 74 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVD6416ANLT4G-001 is a semiconductor devices that belongs to the category of Transistors - FETs, MOSFETs - Single, and it is used as a switch in many electronic circuit designs and applications. In this article, we will discuss the application field, working principle and main features of the NVD6416ANLT4G-001.
Application Field
The NVD6416ANLT4G-001 MOSFET is a high-power, high-speed device that can be applied to a wide range of applications. It is suitable for uses where large amounts of current are required, and it can act as an amplifier, voltage regulator, driver and switch. The device can be used in a wide variety of circuit types, including analog and digital high-power designs, radio frequency (RF) circuits, digital and analog converters, high-voltage regeneration circuits, and motor control and speed control designs. It is also suitable for use in automotive, industrial, telecommunications, audio and video applications.
Working Principle
The NVD6416ANLT4G-001 MOSFET is a voltage-controlled, depletion-mode FET. It has two distinct terminals, the gate and the drain, which are connected to one another and form an electric field, referred to as the transistor channel. Applying a voltage between the gate and the drain creates an electric field in the transistor, causing current to flow between the gate and the drain. The current is dependent on the strength of the electric field, which is controlled by the applied voltage.
The NVD6416ANLT4G-001 can be used to switch large amounts of power between its terminals, as it can handle currents up to 5 Amps and voltages up to 400 V. It also has a low on-resistance and a low capacitance, which makes it suitable for high-speed applications and reduce power losses. Additionally, the device has a very low gate-drain capacitance, which makes it particularly attractive for use in high-frequency applications.
Main Features
- Voltage controlled, depletion-mode FET
- Low on-resistance and low gate-drain capacitance
- Capable of handling currents up to 5 Amps and voltages up to 400 V
- Operating temperature range between -55°C and +150°C
- Suitable for use in analog and digital applications, motor control, and RF circuits
The specific data is subject to PDF, and the above content is for reference
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