NVD6828NLT4G-VF01 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2900pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	61nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	20 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.7A (Ta), 41A (Tc)
Drain to Source Voltage (Vdss):	90V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVD6828NLT4G-VF01 is a single N-Channel field effect transistor (FET). It is designed for use in high-density, multidie integrated circuit applications such as power MOSFETs, H-bridge drivers, and high-voltage or high-speed switching. The NVD6828NLT4G-VF01 is designed to withstand high-voltage and high-current conditions for use in applications such as motor, component, or light control. The NVD6828NLT4G-VF01 is available in a TO-252 package with three metal pins. This package, called a "three-pin" package, consists of a metal source and drain contact, along with a gate terminal mounted on top of an electrically insulating substrate. This allows for a more compact and efficient design with reduced physical dimensions and improved electrical performance compared to larger packages.The NVD6828NLT4G-VF01 is an enhancement type Field Effect Transistor (FET) that works in either an N-channel or P-channel mode, depending on the circuit configuration. It is an enhancement type FET because the voltage on the gate of the transistor allows the current between the source and drain terminals to diverge or converge, and this variation is the basis of the FET amplifier. In an N-channel FET, when a voltage is applied to the gate terminal, the electric field created between it and the source terminal causes electrons to flow from the source to the drain, allowing current to flow through the channel region in a manner similar to an electric switch. The amount of current that can flow through the channel is determined by the voltage on the gate terminal, which is usually controlled by a signal or circuit.In contrast, a P-channel FET works in the opposite direction. A voltage applied to the gate terminal of the P-channel FET causes electron flow from the source to the drain, allowing current to flow through the channel region in a manner similar to an electric switch. However, the current that can flow through the channel is determined by the voltage on the gate terminal, which is usually controlled by a signal or circuit.The NVD6828NLT4G-VF01 is designed to withstand high-voltage and high-current conditions, making it ideal for applications such as motor, component, or light control. It also offers superior frequency performance and switching speed compared to similar transistors, making it suitable for a wide range of applications. The device is available in a variety of package and voltage configurations and is easy to use and suitable for both prototyping and production applications. The NVD6828NLT4G-VF01 is designed for low voltage applications and can operate from a single supply voltage of up to 48V. It is capable of handling a maximum output current of 30A and maximum power dissipation of up to 200w. Compared to conventional power MOSFETs, it offers a much higher degree of efficiency and compatibility with a wide range of digital circuit designs. The NVD6828NLT4G-VF01 is an ideal choice for a variety of applications such as high-power switching, motor control, and power-supply regulation. It is suitable for use in both digital and analog circuit designs and is an ideal choice for applications in automotive, industrial, medical, and consumer electronics. The device also features high integration and scalability, which allows for a compact and efficient design in most applications. Overall, the NVD6828NLT4G-VF01 is an ideal choice for a variety of applications requiring high-voltage and high-current conditions, as well as superior frequency performance and switching speed. Its low voltage operation and high integration make it suitable for a wide range of circuit designs and applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description