Allicdata Part #: | PBSS4160K,115-ND |
Manufacturer Part#: |
PBSS4160K,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 60V 0.75A SC59 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 750mA 220MHz 425m... |
DataSheet: | PBSS4160K,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 750mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 280mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 5V |
Power - Max: | 425mW |
Frequency - Transition: | 220MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3; MPAK |
Base Part Number: | PBSS4160 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PBSD4160K is a single-stage bipolar junction transistor (BJT) with a 115 application field. It is mainly used for general purpose signal amplification, frequency modulation (FM), and switching applications. Its center frequency is 0.4GHz with a minimum gain of 17dB. This type of transistor is used in various electronic circuits and is capable of handling moderate output power. This variation of BJT works by making use of two p-type and one n-type layers, allowing two possible current paths between the two terminals. There is an emitter connected to the n-type layer, a base connected to the p-type layer and the collector connected to the remaining p-type layer.
A PBSD4160K works by introducing an electric current between the emitter and base. This current must be provided by an external source and will flow through the junction between the two p-type and n-type layers. As this current passes through, electrons are pushed from the n-type layer to the p-type layer. This creates a depletion layer and a small potential barrier between the two layers. Since this layer is so thin, electrons on the other side of the layer can easily move through. These electrons will pass through the remaining p-type layer and reach the collector, thus creating an electric current from base to collector.
This type of current is known as the amplified collector current which is proportional to the base current. This current is an amplified version of the input current, allowing more power to be delivered to the output devices. While this current is being amplified by the BJT, it is also important for the base-emitter voltage to be maintained as well. If this voltage falls too low, the excess collector current will begin to saturate the transistor, thereby preventing it from delivering a proper output voltage or current.
In order to ensure that the voltage is maintained properly and the transistor functions properly, a voltage divider bias circuit is usually used. This circuit essentially divides the base-emitter voltage into two parts and supplies each one with a separate source. This divider helps to ensure that the base-emitter voltage remains high enough to allow the transistor to function properly. These are the basic concepts surrounding a PBSD4160K, a transistor typically used in a number of applications ranging from signal amplification to switching.
The specific data is subject to PDF, and the above content is for reference
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