PBSS4140S,126

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 500mA, 5V
Power - Max:	830mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	PBSS4140

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Introduction

The PBSS4140S,126 is an NPN silicon bipolar junction transistor integrated circuit that belongs to the single type. It is available in a high-power, single-in-line package and has a power dissipation rating of up to 5 watts. Its maximum collector current rating is 1.5 amperes. Its maximum forward voltage rating is 4 volts. It is capable of operating at an ambient temperature up to +150°C and is offered in both bulk and tape-and-reel packaging. This type of transistor is widely used in various application fields and has a steady performance and long lifespan.

Application Fields

The PBSS4140S,126 can be used in a variety of applications, such as in DC-DC converters, pulse switching, general purpose amplifiers, low noise amplifiers, low frequency amplifiers, high frequency amplifiers, audio amplifiers, power amplifiers, switching circuits, voltage regulators, current regulators, logic control circuits and more.

Working Principle

The PBSS4140S,126 is a bipolar junction transistor that works on the principle of current control. It consists of three terminals: the Base, Collector, and Emitter. When the base is forward biased with a forward bias voltage, a current is created between the collector and emitter and this is known as the operating current of the transistor. When a voltage is applied to the base, it causes a current to flow between the collector and emitter terminals, making the transistor to switch on. This process is known as current amplification. The current amplification ratio is determined by the current gain of the transistor, which is a measure of the transistor\'s ability to amplify the current flowing in the collector-emitter circuit.

Benefits

The PBSS4140S,126 offers many benefits, such as improved power efficiency, low power consumption, high current carrying capacity, low form factor, high switching speed, and low operating temperature. It also has a robust design and is capable of withstanding high temperature and voltage levels, making it an ideal choice for many applications. It also provides superior noise immunity and is suitable for high-frequency operations.

Conclusion

In conclusion, the PBSS4140S,126 is an NPN silicon bipolar junction transistor integrated circuit that belongs to the single type. It is available in a high-power, single-in-line package and has a power dissipation rating of up to 5 watts. Its maximum collector current rating is 1.5 amperes. Its maximum forward voltage rating is 4 volts. It can be used in a variety of applications, such as in DC-DC converters, pulse switching, general purpose amplifiers, low noise amplifiers, low frequency amplifiers, high frequency amplifiers, audio amplifiers, power amplifiers, switching circuits, voltage regulators, current regulators, logic control circuits and more. It offers many benefits, such as improved power efficiency, low power consumption, high current carrying capacity, low form factor, high switching speed, and low operating temperature. In addition, it provides superior noise immunity and is suitable for high-frequency operations.

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