Allicdata Part #: | 1727-3944-2-ND |
Manufacturer Part#: |
PBSS9110T,215 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 100V 1A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 1A 100MHz 480mW ... |
DataSheet: | PBSS9110T,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04631 |
6000 +: | $ 0.04167 |
15000 +: | $ 0.03704 |
30000 +: | $ 0.03473 |
75000 +: | $ 0.03087 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 500mA, 5V |
Power - Max: | 480mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PBSS9110 |
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The PBSS9110T,215 is a bipolar single transistor (BJT). It is a N-Channel Enhancement mode transistor, which is intended for use in various applications, such as in switchmode power supplies and other related areas. It is in the form of an isolated, layered metal-oxide semiconductor field effect transistor (MOSFET).
This particular transistor has an RDS(ON) max of 100mOhm. This is the maximum for the on resistance rate at the specified voltage. It also has a drain-source voltage of 30V and a drain-source current of 215A. These are standard measurements that you measure when using this transistor. It also has a junction temperature of 175 degrees celsius.
The PBSS9110T,215 is designed to be used in applications where switching power is the primary focus. It is used in various types of applications, such as in high reliability, high speed, and low power applications. This transistor is well-suited for switching in low noise, high current AC/DC applications. It is also used for power management and in SMPS applications. For example, the transistor can be used in switching power supplies that are meant to provide a steady regulated voltage to the circuit.
As for the working principle behind the PBSS9110T,215, it operates using a depletion region construction. The transistors are made up of two N-Channel MOSFETs, both having their own controlled gate. When the gate voltage is applied, the depletion region is created beneath the gate and this will drain current when the transistor is on. When the gate voltage is removed, this allows the electrons to move freely in both directions, thus creating an on/off toggle switch. This is done by controlling the gate voltage on the N-Channel MOSFETs.
In conclusion, the PBSS9110T,215 is a bipolar single transistor (BJT) which is ideally suited for switching power applications. The transistor operates using a depletion region construction by controlling the gate voltage on the N-Channel MOSFETs. It has a RDS(ON) max of 100mOhm, a gate-source voltage of 30V and a drain-source current of 215A. These measurements make it suitable for use in various applications, such as in high reliability, high speed and low power applications.
The specific data is subject to PDF, and the above content is for reference
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