PBSS5350Z/ZLF Allicdata Electronics
Allicdata Part #:

PBSS5350Z/ZLF-ND

Manufacturer Part#:

PBSS5350Z/ZLF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BISS
More Detail: Bipolar (BJT) Transistor PNP 50V 3A 100MHz 2W Surf...
DataSheet: PBSS5350Z/ZLF datasheetPBSS5350Z/ZLF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SC-73
Description

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The PBSS5350Z/ZLF is a single bipolar transistor device. It is a three-terminal electrically isolated monolithic device made from semiconductor material with a small form factor. The device is commonly used in a variety of applications from consumer electronics and portable devices to radio frequency circuits and automotive electronic systems. It is also used in high power switching and linear applications.

The PBSS5350Z/ZLF is a NPN transistor, which refers to the type of charge carriers that are injected into the base to control current flow in the device. The NPN stands for Negative-Positive-Negative, where the negative charge is injected into the base, causing current to flow into the collector. The transistor also has an emitter which serves as the source of electrons that are released when the emitter-base junction is forward biased. The current flowing out of the emitter is proportional to the voltage applied across the base-emitter junction.

The PBSS5350Z/ZLF is a high-performance, low-power consumption device capable of handling up to 250 mA peak collector current. It has a fast switching speed with a frequency bandwidth of up to 1 MHz, making it suitable for a wide range of digital switching applications. Furthermore, the low saturation voltage of this device allows it to be used in low voltage driven designs.

The device is also ideal for linear applications. The PBSS5350Z/ZLF has a maximum collector-emitter saturation voltage of 0.2 V and a low noise figure, making it suitable for audio and video amplifiers. In addition, the device has a high open-base forward current gain, enabling it to be used in low-level preamplifier circuits.

The working principle of a transistor is that current flowing in the collector is controlled by the current flowing in the base. When the base current is increased, the collector current also increases, allowing it to amplify the signal. When the base current is decreased, the collector current decreases, which allows the transistor to act as a switch to control the signal.

In summary, the PBSS5350Z/ZLF is a high-performance, low saturation voltage bipolar transistor well suited for digital switching and linear applications. It has excellent switching speed, low saturation voltage and low noise figure, making it an ideal choice for a wide range of electronic systems.

The specific data is subject to PDF, and the above content is for reference

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