PBSS9110AS,126

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The PBSS9110AS,126 is a single transistor belonging to the Bipolar junction transistor (BJT) family. This device is an NPN type transistor, with a DC current gain of h-FE of 75. The transistor has a maximum collector-emitter voltage of 80 V and a maximum peak current capacity of 0.5A.

The PBSS9110AS,126 is used in a wide range of applications, ranging from signal amplification and switching to piezoelectric effects. It is commonly used in low-power audio amplifier applications, frequency modulation, signal modulation, signal detection, signal shaping, and power supply circuit protection.

The principle of operation of the PBSS9110AS,126 is based on the fact that when a voltage is applied to the base of the transistor, a small current flows in the base-emitter junction, thus allowing a larger current to flow from the collector to the emitter. The amount of current flowing from the collector to the emitter can be adjusted by altering the current in the base-emitter junction. This is commonly referred to as transistor biasing. The PBSS9110AS,126 can be biased in either a forward or reverse bias configuration depending on the desired application.

The PBSS9110AS,126 is a high-performance transistor that is capable of operating over a wide frequency range and provides desirable noise performance. It is well suited for use in consumer electronics, automotive, and industrial applications. Its rugged construction ensures reliable operation over a wide temperature range.

In conclusion, the PBSS9110AS,126 is a single NPN Bipolar junction transistor that is well suited for a variety of applications. It offers excellent performance characteristics over a wide frequency range, good noise performance, and enhanced reliability in a wide range of operating temperatures. It also has the ability to be biased in either a forward or reverse bias configuration. The PBSS9110AS,126 is an ideal choice for a wide range of consumer electronic, automotive, and industrial applications.

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