| Allicdata Part #: | 1727-7487-2-ND |
| Manufacturer Part#: |
PBSS4160XX |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | PBSS4160X/SOT89/MPT3 |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 180MHz 1.35W S... |
| DataSheet: |  PBSS4160XX Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.07277 |
| 2000 +: | $ 0.06549 |
| 5000 +: | $ 0.06185 |
| 10000 +: | $ 0.05639 |
| 25000 +: | $ 0.05276 |
| 50000 +: | $ 0.04851 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 200mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 500mA, 10V |
| Power - Max: | 1.35W |
| Frequency - Transition: | 180MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | SOT-89 |
Description
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PBSS4160XX is a type of single bipolar junction transistor (BJT) that belongs to the family of NPN transistors. This device has an Enhanced Series PNP base-collector voltage rating, and is widely used in different electronic applications for switching and amplification.The PBSS4160XX is a low–power NPN transistor formed from two N-type semiconductor cells. It has one N-type layer between the P-type layer and another N-type layer, forming the NPN structure. It has a voltage rating of 40 Volts and a collector-emitter saturation voltage of 0.7V at a nominal current of 100mA. This device has a wide range of characteristics, with a gain of up to 200. Another important feature of the PBSS4160XX is that it has a very small size, making it ideal for use in compact designs.
The PBSS4160XX can be used in applications requiring low-power switching, such as in telecommunication systems and consumer electronics. It can also be used for amplifications, such as in audio systems. Furthermore, it is also used for protection circuits such as those used in power supplies. The device can also be used for various logic applications.
The working principle of the PBSS4160XX is based on the fact that it has two semiconductor layers. One layer is the N-type layer and the other layer is the P-type layer. In operation, the device works by creating a forward-current biasing voltage at the P-N junction of the two layers. The current flowing through the P-N junction causes a voltage drop across the two layers. When this voltage drop reaches a certain level, the current begins to move through the N-type layer and into the P-type layer, which then causes the N-type layer to become more lacking in electrons, thus allowing holes to move freely across the junction barrier. This electric current flow is what allows the PBSS4160XX to conduct electricity.
Overall, the PBSS4160XX is a great choice for applications that require low-power switching or amplification. This device is very compact and has a wide range of characteristics, making it suitable for various electronic applications. Furthermore, it also has a very low collector-emitter saturation voltage, making it even more attractive. Finally, understanding its working principle can help designers to make full use of its potential and choose it as the ideal device for their applications.
The specific data is subject to PDF, and the above content is for reference
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