PBSS5230T,215 Allicdata Electronics
Allicdata Part #:

1727-5764-2-ND

Manufacturer Part#:

PBSS5230T,215

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 30V 2A SOT23
More Detail: Bipolar (BJT) Transistor PNP 30V 2A 200MHz 480mW S...
DataSheet: PBSS5230T,215 datasheetPBSS5230T,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05424
6000 +: $ 0.04882
15000 +: $ 0.04339
30000 +: $ 0.04069
75000 +: $ 0.03616
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 480mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PBSS5230
Description

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Bipolar junction transistors (BJT) generate their own current between the two junctions, and can be used for amplification or switching. In particular, the single collector type of BJT, known as the PBSS5230T,215 is a device that holds great importance among BJT’s and should be given consideration when looking at transistors from the single type, or either end of the spectrum.

The PBSS5230T,215 has a current gain of approximately 215 and offers a maximum current load of 150mA per channel. It can also achieve a high switching frequency up to 1000kHz which can be extremely beneficial when dealing with signal processing and transmission. With these specs, the PBSS5230T,215 is perfectly suited for applications that require moderate power, such as signal sensing, digital signal control and audio amplification.

The PBSS5230T,215 offers many attractive features to help it stand out among other transistors. The junction breakdown voltage is only 250V and its collector-emitter saturation voltage is only 450mV which gives it a remarkably broad range of operating voltage choices. The Ic-Vce spike suppression rating of 30V is also better than most other transistors, meaning it can be used in more challenging applications with less worry of breakdown. Finally, the PBSS5230T,215 can be used in temperatures up to 150 degrees Celsius, enabling it to be used in extreme conditions.

In terms of its working principle, the PBSS5230T,215 uses two back-to-back PN junctions to create a single bipolar junction. Charge carriers are pushed from the collector to the emitter under the control of the base current. The base current is small compared to the current carried by the Collector and Emitter, meaning that a small amount of current can be used to control a much larger current. This is the basis of its amplification capabilities. Likewise, the transistor can be used as a switch; when the base current reaches a certain level, the transistor conducts.

Overall, the PBSS5230T,215 is an excellent single BJT that can be used for applications such as signal sensing, digital signal control and audio amplification. It’s low power usage and high switching frequency make it a great choice for applications that require sensitivity, accuracy, and reliability. The PBSS5230T,215’s high current gain, temperature rating, and breakdown voltage make it capable of handling nearly any situation it may be used in.

The specific data is subject to PDF, and the above content is for reference

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