PBSS305NX,115 Discrete Semiconductor Products

Transistors - Bipolar (BJT) - Single

The PSSB305NX,115 is a NPN silicon Epitaxial Planar Large Signal Transistor that is often used in various types of audio amplifying circuits. It is also used in general purpose switching circuits. This transistor has a certain maximum voltage that should not be exceeded when using it, which is 50V. This transistor can be used for applications such as power amplification, switching, and simple circuit designs.

The package dimensions for the PSSB305NX,115 transistor are 3.2 x 2.5 x 1.5 mm. It also has a large variety of operating conditions, such as collector-emitter voltage of up to 50V, base-emitter voltage of up to 4.5V, and collector current of up to 2A. This allows for a large number of different applications for it across different electronic circuitry. The frequency of operation for this transistor is also quite high, reaching up to 150MHz.

The power dissipation of the PSSB305NX,115 is 1W. The collector-base breakdown voltage is 45V, while the collector-emitter breakdown voltage is 30V. This transistor features a low collector-emitter saturation voltage of 1V max. It can handle a high base-emitter cut-off current of 5mA, which means that it can be used in several low power applications.

The PSSB305NX,115 also has a wide operating temperature range from -55 to +150. This allows the transistor to be used in various environments with different temperatures to accommodate its purpose. It also has a fast recovery speed of 10-15ns, which is perfect for high speed circuit applications.

The working principle of the PSSB305NX,115 transistor is quite simple. It is a three layer semiconductor device that works by altering the current flow between two terminals based on the voltage being applied to the third terminal. When a voltage is applied to the base of the transistor, the current flowing between the collector and emitter of the transistor increases, allowing the transistor to act as a switch or amplifier. As the voltage applied to the base increases, so does the current between the collector and emitter, allowing for a greater level of amplification or control.

In conclusion, the PSSB305NX,115 is a NPN silicon Epitaxial Planar Large Signal Transistor that offers high speed and wide temperature operation. It can be used for a variety of different applications, including power amplification and switching. Its working principle is based on controlling the current flow between the collector and emitter of the transistor, depending on the voltage applied to the base. This makes the PSSB305NX, 115 a versatile and reliable transistor that can be used in various types of electronic circuitry.