Allicdata Part #: | 1727-3893-2-ND |
Manufacturer Part#: |
PBSS301PD,115 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 20V 4A 6TSOP |
More Detail: | Bipolar (BJT) Transistor PNP 20V 4A 80MHz 1.1W Sur... |
DataSheet: | PBSS301PD,115 Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.11279 |
6000 +: | $ 0.10551 |
15000 +: | $ 0.09824 |
30000 +: | $ 0.09702 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 420mV @ 600mA, 6A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2A, 2V |
Power - Max: | 1.1W |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | PBSS301P |
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The PBSS301PD,115 Transistor is a bipolar junction transistor (BJT) designed for use in a variety of applications. It is a single, two-terminal junction device with a low-power rating of 3.2 W and a breakdown voltage rating of 6V. The device is capable of driving loads with its low-voltage, large-current capability.
The PBSS301PD,115 has a PNP construction. It is produced using silicon semiconductor technology and is a part of the BS series. The device has a mounting style of through-hole for easy installation. The package for the PBSS301PD,115 is DPAK, which is a plastic package used for power semiconductor devices. The pinout for this device is BASE-EMITTER-COLLECTOR.
The PBSS301PD,115 is an ideal choice for a range of digital, sweep and RF applications. It is suitable for use in portable and desktop communications equipment, automotive electronics, and industrial applications. The device offers high speed, low power consumption, and superior reliability. The transistor can handle currents up to 35A in high impedance applications such as microprocessors, regulators and drivers.
The working principle of the PBSS301PD,115 is based on the interaction between a minority carrier and a majority carrier. The minority carrier is an electron, while the majority carrier is a hole that can be formed from the electron donor. When a voltage is applied, this causes current to flow from the base to the collector through the emitter. This current is then amplified and passed on to the external circuit. As the current passes through the transistor, the device produces a voltage drop between the base and the collector. This voltage can be used to control the current in the external circuit.
The PBSS301PD,115 can be used in applications that require high current control and low noise. The device is ideal for audio amplification, high frequency and low noise circuits, as well as power supply circuits. Its rugged design makes it suitable for use in harsh environments. The transistor can also be used in switching applications, such as power supplies, relays, and other on-off circuits.
In summary, the PBSS301PD,115 is a PNP bipolar junction transistor (BJT) designed for use in digital, sweep and RF applications. It offers low power consumption, high speed, and superior reliability. The device operates on the principle of a minority and majority carrier, whereby a voltage applied to the base and emitter creates a current which is then amplified and sent through the external circuit. This allows for the device to be used for high current control and low noise applications.
The specific data is subject to PDF, and the above content is for reference
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