PBSS303NZ,135

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5.5A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	240mV @ 275mA, 5.5A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 2A, 2V
Power - Max:	2W
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	PBSS303N

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Introduction to PBSS303NZ,135

The PBSS303NZ,135 is an NPN-type, bipolar junction transistor (BJT). This type of device is commonly used in amplifiers and other signal-processing circuits, particularly in industrial and automotive applications. In this article, we will cover the application field and working principle of PBSS303NZ,135 and how it can be used in various applications.

Application Field for PBSS303NZ,135

PBSS303NZ,135 is an NPN-type, bipolar junction transistor (BJT). This type of transistor is incredibly versatile and can be used in many different applications. It is most commonly found in amplifiers, which use it to increase the voltage or power of a signal. It is also used in motor control circuits and other types of power control circuits, such as pulse-width modulation (PWM). It is also used in various switching applications, to either control load current or act as a switch for logic circuits.

Working Principle of PBSS303NZ,135

The PBSS303NZ,135 is a Lateral PNP transistor. It consists of two layers two semiconductor, layers that are sandwiched between two electrodes. The two layers are a "base" and an "emitter". The base of the transistor is the control electrode, while the emitter and collector electrodes provide the current flow through the other layers. When DC current is applied to the base, this controls the current flowing between the emitter and collector.When the base current is large enough, it creates a “forward bias" in the emitter-collector junction. This causes the junction to become conductive and allow current to flow between the base and collector. The amount of current flow is determined by the amount of current applied to the base. When the base current is decreased, the emitter-collector junction stops conducting and current will no longer flow. The PBSS303NZ,135 can be used in switching circuits, to either control loads or as a logic switch.

Conclusion

In conclusion, the PBSS303NZ,135 is a NPN-type, bipolar junction transistor (BJT). It is an incredibly versatile device, and is used in numerous applications such as amplifiers, motor control circuits, power control circuits, pulse-width modulation (PWM), and switch logic circuits. Its working principle is based on two semiconductor layers, which form an emitter-collector junction, that is controlled by a current applied to the base. It makes a great choice for many different circuits and applications, due to its versatility and ease-of-use.

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