PBSS303PZ,135 Allicdata Electronics
Allicdata Part #:

1727-5730-2-ND

Manufacturer Part#:

PBSS303PZ,135

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 30V 5.3A SOT-223
More Detail: Bipolar (BJT) Transistor PNP 30V 5.3A 130MHz 2W Su...
DataSheet: PBSS303PZ,135 datasheetPBSS303PZ,135 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.14388
8000 +: $ 0.13396
12000 +: $ 0.13230
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5.3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 265mV @ 265mA, 5.3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: PBSS303P
Description

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The PBSS303PZ,135 is a type of bipolar-junction transistor (BJT). This type of transistor is a three-terminal semiconductor device that amplifies and switches electrical signals and power. Bipolar transistors come in three types: single, dual, and complementary. The PBSS303PZ,135 is a single type of bipolar transistor (BJT).

The PBSS303PZ,135 is a silicon, low saturation voltage, NPN transistor. It has a maximum collector current of 540 mA and a maximum power dissipation of 625 mW. It is a surface-mounting device package that is lead-free and halogen-free. It is suitable for applications such as audio frequency power amplifiers, battery management, digital receivers, and interface circuits.

The working principle of a bipolar transistor is quite simple. The current flows through the emitter-base junction of the transistor resulting in a current gain. The gain occurs when the input current (or base current) flows into the emitter-base junction and the output current (or collector current) is induced at the collector-base junction. This principle forms the basis of operation of all types of bipolar transistors.

The PBSS303PZ,135 is an efficient and reliable transistor for a wide range of applications. It is suitable for audio frequency applications, battery management, digital receivers, and interface circuits. It is a low saturation voltage NPN transistor that offers high current gain and low power dissipation. It is lead-free and halogen-free, making it an excellent choice for many applications. In addition, it provides excellent thermal stability making it extremely reliable.

In conclusion, the PBSS303PZ,135 is a silicon, low saturation voltage, NPN bipolar transistor. It is a three-terminal semiconductor device that amplifies and switches electrical signals and power. The working principle is based on the emitter-base junction of the transistor resulting in a current gain. It is a lead-free and halogen-free device and is suitable for a wide range of applications such as audio frequency power amplifiers, battery management, digital receivers, and interface circuits. It offers excellent thermal stability and high current gain, making it an efficient and reliable transistor for many applications.

The specific data is subject to PDF, and the above content is for reference

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