Allicdata Part #: | 1727-5730-2-ND |
Manufacturer Part#: |
PBSS303PZ,135 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 30V 5.3A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 5.3A 130MHz 2W Su... |
DataSheet: | PBSS303PZ,135 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.14388 |
8000 +: | $ 0.13396 |
12000 +: | $ 0.13230 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5.3A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 265mV @ 265mA, 5.3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 1A, 2V |
Power - Max: | 2W |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | PBSS303P |
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The PBSS303PZ,135 is a type of bipolar-junction transistor (BJT). This type of transistor is a three-terminal semiconductor device that amplifies and switches electrical signals and power. Bipolar transistors come in three types: single, dual, and complementary. The PBSS303PZ,135 is a single type of bipolar transistor (BJT).
The PBSS303PZ,135 is a silicon, low saturation voltage, NPN transistor. It has a maximum collector current of 540 mA and a maximum power dissipation of 625 mW. It is a surface-mounting device package that is lead-free and halogen-free. It is suitable for applications such as audio frequency power amplifiers, battery management, digital receivers, and interface circuits.
The working principle of a bipolar transistor is quite simple. The current flows through the emitter-base junction of the transistor resulting in a current gain. The gain occurs when the input current (or base current) flows into the emitter-base junction and the output current (or collector current) is induced at the collector-base junction. This principle forms the basis of operation of all types of bipolar transistors.
The PBSS303PZ,135 is an efficient and reliable transistor for a wide range of applications. It is suitable for audio frequency applications, battery management, digital receivers, and interface circuits. It is a low saturation voltage NPN transistor that offers high current gain and low power dissipation. It is lead-free and halogen-free, making it an excellent choice for many applications. In addition, it provides excellent thermal stability making it extremely reliable.
In conclusion, the PBSS303PZ,135 is a silicon, low saturation voltage, NPN bipolar transistor. It is a three-terminal semiconductor device that amplifies and switches electrical signals and power. The working principle is based on the emitter-base junction of the transistor resulting in a current gain. It is a lead-free and halogen-free device and is suitable for a wide range of applications such as audio frequency power amplifiers, battery management, digital receivers, and interface circuits. It offers excellent thermal stability and high current gain, making it an efficient and reliable transistor for many applications.
The specific data is subject to PDF, and the above content is for reference
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