PBSS306PX,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A PBSS306PX,115 is a single bipolar junction transistor (BJT). BJTs are distinguished by utilizing different combinations of semiconductor materials and varying the electrical current that they can be subjected to without failing. In BJTs, a base terminal is sandwiched between two other terminals: an emitter and a collector.

In this particular bipoar transistor, the emitter is attached to a negative voltage source, while the collector is connected to a positive voltage source. For example, a battery may be used to provide the necessary voltage. When bias voltage is applied to the base, this forms a potential junction between the emitter and the collector. As current passes through the base, electrons from the negative pole are drawn into the positive pole – a process called heterojunction.

Because of its basic characteristics, BJTs can be used in a variety of applications. They are used primarily in switching devices, amplifiers, power supplies and oscillators. Also, bipolar transistors can be used to control the speed of motors, regulate the power output of radios or other electronic devices, and amplify signals in applications like radar or telecommunication systems.

One of the key advantages of transistors is their ability to control large amounts of power with a small amount of input. This makes them especially suitable for power-intensive applications. For instance, BJTs can be used to drive high power outputs such as motors, relays and solenoids. Conversely, they may also be used to control low power outputs such as LED indicators and small buzzers.

The functionality of a PBSS306PX,115 can be further understood by looking at its electrical characteristics. It operates with a breakdown voltage of 310 volts, a collector current rating of 500 mA, and a power dissipation of 800 mW. Its power gain, referred to as the current gain or beta, is generally between 70 and 220.

Simply put, a PBSS306PX,115 is a single bipolar junction transistor which can be used in a variety of applications. It has a breakdown voltage of 310 volts and a collector current rating of 500 mA. Its power dissipation is 800 mW and its current gain varies between 70 and 220.

The specific data is subject to PDF, and the above content is for reference