PBSS4021NT,215 Allicdata Electronics
Allicdata Part #:

1727-4341-2-ND

Manufacturer Part#:

PBSS4021NT,215

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 20V 4.3A SOT23
More Detail: Bipolar (BJT) Transistor NPN 20V 4.3A 165MHz 1.1W ...
DataSheet: PBSS4021NT,215 datasheetPBSS4021NT,215 Datasheet/PDF
Quantity: 12000
3000 +: $ 0.12176
6000 +: $ 0.11390
15000 +: $ 0.10605
30000 +: $ 0.10474
Stock 12000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4.3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2A, 2V
Power - Max: 1.1W
Frequency - Transition: 165MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PBSS4021N
Description

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PBSS4021NT,215 Application Field and Working Principle

The PBSS4021NT,215 is a Bipolar Junction Transistor (BJT). This form of transistor has two junctions: one between the base and the collector, and one between the base and the emitter. This type of transistor is mainly used for switching and amplifying purposes. It is also used in digital logic and for controlling motors.

Features

  • The PBSS4021NT,215 has a VCE of 60V with a maximum collector current of 0.8A and a power dissipation of 80mW.
  • It is also suitable for low noise applications.
  • It supports high gain applications.
  • It has a standard package size.

Application Fields

The PBSS4021NT,215 is mostly used in low frequency switching circuits and in controlling motors, such as steppers and brushless DC motors. It is also used in some circuit designs to increase voltage and current gain. Additionally, it is also used in telecommunication circuits and as a high speed switch.

Working Principle

Bipolar junction transistors (BJT) work on the principle of current amplification. The base-emitter junction, when forward-biased, allows the flow of current. This is then amplified through the base-collector junction. The collector current (Ic) is related to the base current (IB) by the gain current ratio or hFE. This factor determines the gain of the BJT.

The PBSS4021NT,215 has a myriad of features making it a great choice for many applications. With its low power dissipation and high gain, it is an excellent choice for many designs, including power switching and motor control.

The specific data is subject to PDF, and the above content is for reference

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