Allicdata Part #: | 1727-3946-2-ND |
Manufacturer Part#: |
PBSS4160DS,115 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2NPN 60V 1A 6TSOP |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A... |
DataSheet: | PBSS4160DS,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06549 |
6000 +: | $ 0.06152 |
15000 +: | $ 0.05755 |
30000 +: | $ 0.05292 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 5V |
Power - Max: | 420mW |
Frequency - Transition: | 220MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | PBSS4160DS |
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The PBSS4160DS,115 is an array of 12 transistors packaged in a small 3-pin SOT-23 package. This type of transistor array is known as a Bipolar Junction Transistor or BJT array. It is designed specifically for high-frequency RF applications, such as mobile phones and Bluetooth devices.
The device consists of three separate BJTs connected in an H bridge configuration. Each of the three BJTs have an emitter, a base and a collector, along with a controlling base terminal. The central base terminal is connected to the common emitter of the three BJTs in order to provide an intermediate voltage level between the two sides of the H bridge. The BJTs are all NPN transistors and the base voltage allows them to be switched independent of each other.
The primary purpose of the PBSS4160DS,115 is to eliminate the need for multiple discrete components when building an H bridge circuit. The H bridge is an electrical circuit which can switch between two different voltages in order to control the flow of current. It is often used in applications such as motor control and power switching circuits. The H bridge circuit consists of four switches which can be used to control the direction of the current flow. By using a BJT array, it reduces the number of required components to only three.
The working principle of the PBSS4160DS,115 is fairly simple. The controlling base terminal is used to control the state of the three BJTs. When the voltage applied to the controlling base terminal is low, the three BJTs are all switched off and the power is not switched. When the voltage is increased, the three BJTs are turned on and the power is switched. This allows it to be used as a switch for controlling current flow.
The PBSS4160DS,115 is mainly used in mobile phones, Bluetooth devices, and other high-frequency RF applications. It is also used in motor control circuits to provide a quick, efficient switching solution that eliminates the need for multiple discrete components. Since it is available in a small, low-cost package, it is also popular for prototyping and production designs.
In conclusion, the PBSS4160DS,115 is a transistors array which is used mainly in high-frequency RF applications such as mobile phones and Bluetooth devices. It is packaged in a small 3-pin SOT-23 package and consists of three NPN BJTs connected in an H bridge configuration. The primary purpose of the device is to reduce the number of required components in an H bridge circuit and provide a quick, efficient switching solution. It works by using the controlling base terminal to control the state of the three BJTS in order to switch the power. With its small size and low cost, the PBSS4160DS,115 is an ideal solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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