PBSS4160T,215

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The PBSS4160T,215 is an NPN Silicon Planar Epitaxial transistor made out of a combination of a poly Silicon gate and an oxide layer. It is produced by NXP Semiconductors for use in various applications.

The PBSS4160T,215 is used for both low voltage and high voltage applications and it is able to operate with an input voltage range from 1.5V to 18V. It is suitable for use in high speed switching applications due to its high frequency performance and low power consumption. It is well suited for voltage amplifying purposes as it offers gain up to 200V/V.

The PBSS4160T,215 is a single bipolar junction transistor (BJT). This type of transistor is made of three layers of semiconductor material, which are P-type semiconductor in the center, surrounded by N-type semiconductor on both sides. Its construction allows bipolar current flow, meaning that the base voltage can control both electrons and holes and, therefore, the current.

The working principle of the PBSS4160T,215 relies on the fact that it’s a small signal device. This means that the current flowing through the collector/emitter path is proportional to the base current or base voltage. The base current is controlled by the signal voltage applied to the base-emitter junction. As the base current increases, the collector-emitter current will also increase proportionally.

The PBSS4160T,215 has high switching performance compared to other similar products in the market, and it is able to operate at higher frequency and voltage, which makes it suitable for use in many high-power applications. In addition, it features two different gain types, one with lower gain of 50V/V and one with a higher gain of 200V/V.

Overall, the PBSS4160T,215 is an ideal transistor for many applications, and thanks to its high frequency performance and low power consumption, it is able to deliver superior performance in many areas. Its wide input voltage range and two gain types make it suitable for use in many different types of applications at both low and high voltage levels.

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