PBSS4230T,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	320mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1A, 2V
Power - Max:	480mW
Frequency - Transition:	230MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PBSS4230

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The PBSS4230T,215 is a bipolar junction transistor (BJT) that belongs to the popular and effective “single” type. This highly versatile transistor has a wide range of applications and is often employed in complex electronic designs. In this article, we will provide an overview of the transistor’s application fields, working principle, and other specifications and features. Applications The PBSS4230T,215 is applicable to any of the following electronic applications, among others:

• High speed switching
• Driver ICs
• Automotive components
• Industrial control elements
• Signal amplifiers
• Size exclusion detection
• Switch circuits
• Motor control
• Laser diodes
• Battery powered components
• Optoelectronics

The PBSS4230T,215 benefits from its wide range of applications by addressing the needs of a variety of industries and designers. Thanks to its extreme versatility, it can be used in new and existing electronic components. Working principleThe transistor consists of three terminals, a Base, an Emitter, and a Collector. The main purpose of the transistor is to power an electric charge from one side of the circuit to the other. In the case of PBSS4230T,215, the Base terminal receives a small electrical charge that turns on the transistor. This charge then activates the transistor, allowing electricity to flow from the Base to the Collector. The Collector then transfers this charge to the Emitter, completing the circuit and releasing the electrical charge. This completes the underlying principle behind the PBSS4230T,215. Specifications and featuresThe PBSS4230T,215 is a robust transistor with a wide range of features and specifications. For example, its Collector-Emitter Voltage (Vce) is 100V and its Storage Temperature is −55°C to 150°C. This makes it an invaluable component that can be used in a variety of environments and in multiple applications. Furthermore, its maximum Collector-Base Voltage (Vcb) is 150V and its Collector-Emitter Saturation Voltage (Vce(sat)) is 1V. The transistor also features a very low thermal resistance, with a maximum Dissipation Power (Pd) of 1.5W and a Dielectric Strength of 8kV/μs. These make the PBSS4230T,215 one of the most reliable and efficient single type transistors in the market.ConclusionThe PBSS4230T,215 is an indispensable component for any electronic designer and engineer. Thanks to its wide range of applications, high efficiency, and wide range of features and specifications, this transistor is a reliable and versatile component. Whether for high speed switching, industrial control, switch circuits, or any other application, the PBSS4230T,215 is a powerful component that can be trusted to complete an efficient circuit.

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