PBSS4260PAN,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	90mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1A, 2V
Power - Max:	510mW
Frequency - Transition:	140MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	DFN2020-6
Base Part Number:	PBSS4260

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Introduction

The PBSS4260PAN is a new and advanced Bipolar Junction Transistor (BJT) Array designed for medium power and high speed switching applications. It is a popular choice of transistor array due to its low quiescent power consumption and low thermal impedance. The array is designed to be used in a wide variety of industrial and commercial applications and is clear and simple to use, making it an ideal fit for businesses and hobbyists alike.

Features

The PBSS4260PAN is a four-channel Bi-polar Junction Transistor (BJT) array. It features an integrated resistor divider feedback network, NPN/PNP output, 500 mA driving capability, and low quiescent power consumption of 80 mA at 3.3 V power supply. It offers fast switching speeds, 1.2 μs propagation delay and 4 NS rise/fall time. It is designed with flexibility in mind, allowing for a wide range of customization for customer needs, such as on-board trimming and voltage monitoring.

Application Field and Working Principle

The PBSS4260PAN is most commonly used in medium-power and high-speed switching applications. Such applications include but are not limited to motor control, LED lighting and LED drive, digital control systems, HVAC, and factory automation. The PBSS4260PAN is a bipolar junction transistor that consists of four transistor elements connected in an array. It acts as a four-channel switch and operates in the same way as a single transistor, where the emitter-collector junction is reverse biased, and the external base terminal is used to provide a control voltage or current. The current flow between the emitter and collector is proportional to the base current and the transistors gain. The integrated resistor divider feedback network provides a precise output reference voltage, which can be adjusted to the needs of a particular application. This allows fast and precise switching with minimal effort. The low quiescent power consumption of 80 mA at 3.3 V power supply ensures that the device does not draw too much current, thus reducing the overall power consumption. The device also features a 500 mA driving capability, allowing it to handle higher currents. Finally, the device is designed with a 4 NS rise/fall time, allowing for quick and accurate control over the output signals.

Conclusion

The PBSS4260PAN is a great choice of bi-polar junction transistor array for a wide variety of industrial and commercial applications. Its low quiescent power consumption, high speed, and driving capability make it an ideal choice for those looking for a reliable and cost-effective transistor array. It is easy to use and offers flexibility, allowing users a great deal of customization when creating their own specific applications.

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