PBSS4580PA,115 Allicdata Electronics
Allicdata Part #:

1727-5115-2-ND

Manufacturer Part#:

PBSS4580PA,115

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 80V 5.6A SOT1061
More Detail: Bipolar (BJT) Transistor NPN 80V 5.6A 155MHz 2.1W ...
DataSheet: PBSS4580PA,115 datasheetPBSS4580PA,115 Datasheet/PDF
Quantity: 6000
3000 +: $ 0.10062
6000 +: $ 0.09453
15000 +: $ 0.08843
30000 +: $ 0.08111
Stock 6000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5.6A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 280mA, 5.6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 2.1W
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: 3-HUSON (2x2)
Base Part Number: PBSS4580
Description

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The PBSS4580PA,115 is a single Bipolar Junction Transistor (BJT). It is a part of a larger family of BJT’s. It is designed to work with positive as well as negative voltages. This integrated circuit can switch power and make a connection between two electrical points. It can also be used as a high frequency amplifier and oscillator.The PBSS4580PA,115 is suitable for use in a variety of applications. It is often used in the construction of power supplies, automotive and industrial motor controllers, and voltage regulator circuits. It can also be used in other applications including audio, video, and communication circuits.The PBSS4580PA,115 works by using a single base-emitter junction and two base-collector junctions. The junction between the base and the emitter is the controlling element in a BJT. When a current is applied to the base-emitter junction, it allows electrons (or holes) to move from the emitter to the collector. This causes a current to flow between the two terminals. The current flowing between the collector and emitter is controlled by the current applied to the base.The PBSS4580PA,115 is designed to handle relatively high current levels, up to 200 mA, and has an acceptable power dissipation of 990 mW. The collector-emitter breakdown voltage is 40V and the base-emitter breakdown voltage is 6V. It is capable of operating at frequencies as high as approximately 3 MHz and has an input capacitance of 1.3 pF.It is important to note that the PBSS4580PA,115 is not suitable for use in all applications. It is important to ensure that it is used in conjunction with the correct power supply and other components. Additionally, the appropriate design techniques should be employed to ensure that the device will operate reliably and safely.Overall, the PBSS4580PA, 115 is an excellent choice for a wide range of applications. It is reliable, efficient, and capable of handling high current and power levels. Its high frequency and input capacitance characteristics make it suitable for use in many audio, video, and communication circuits. Additionally, its low power dissipation means that it can be used for many applications without the need for additional cooling. As such, the PBSS4580PA,115 is an excellent device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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