Allicdata Part #: | 1727-5768-2-ND |
Manufacturer Part#: |
PBSS5250X,115 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 50V 2A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 1W Surf... |
DataSheet: | PBSS5250X,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.07277 |
2000 +: | $ 0.06549 |
5000 +: | $ 0.06185 |
10000 +: | $ 0.05639 |
25000 +: | $ 0.05276 |
50000 +: | $ 0.04851 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | PBSS5250 |
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。PBSS5250X,115 Application Field and Working Principle
The PBSS5250X,115 is a high-gain, high-voltage, vibration-resistant, NPN-mounted and insulated gate bipolar transistor (or "IGBT") that is designed for easy installation and excellent operation. It is a member of the PBSS family of IGBTs, and is rated 125 watts DC (average) and 150 watts RMS (load at 125-200 Volts).
Application Field and Working Principle
The PBSS5250X,115 is primarily used in applications requiring intermediate-to-high voltage and current-handling capabilities. Examples include motor control, switching power supplies, AC motor drives, DC motor drives, and switched-mode power converters.
To achieve efficient operation in applications requiring intermediate-to-high voltage and current-handling capabilities, the PBSS5250X,115 enables a bipolar combining action. Its low saturation voltage and high breakdown voltage enable it to operate under higher-voltage and current conditions than those of standard BJTs. Furthermore, its insulation-gate construction ensures that it is not susceptible to mechanical vibration.
The PBSS5250X,115 is also designed to reduce switching losses using its enhanced Miller plateau design. This feature enables it to turn on faster and reach higher operating frequencies than conventional bipolar transistors. As a result, the PBSS5250X,115 is highly efficient when compared to other NPN-mounted and IGBTs. Furthermore, the enhanced Miller plateau design allows it to remain stable over a wide range of operating voltages.
In summary, the PBSS5250X,115 offers a high-gain, high-voltage, vibration-resistant, NPN-mounted and insulated-gate bipolar transistor that is designed for easy installation and excellent operation. Its features make it suitable for applications requiring intermediate-to-high voltage and current-handling capabilities, such as motor control, switching power supplies, AC motor drives, DC motor drives, and switched-mode power converters. Its low saturation voltage and high breakdown voltage make it ideal for higher-voltage and current conditions, and its insulation-gate construction ensures that it is not susceptible to mechanical vibration. Its enhanced Miller plateau design further optimizes its switching losses and operating frequency, delivering a highly efficient solution for these kinds of applications.
The specific data is subject to PDF, and the above content is for reference
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