Allicdata Part #: | 1727-3909-2-ND |
Manufacturer Part#: |
PBSS5320T,215 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 20V 2A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 2A 100MHz 540mW S... |
DataSheet: | PBSS5320T,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08337 |
6000 +: | $ 0.07832 |
15000 +: | $ 0.07326 |
30000 +: | $ 0.06737 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 2V |
Power - Max: | 540mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PBSS5320 |
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The PBSS5320T,215 transistor is a single bipolar transistor (BJT) commonly used in consumer electronics. It is a small signal NPN transistor with a typical gain value of 208 and can be used with a variety of devices like radios, digital to analog converters, and real-time clocks. The PBSS5320T,215 has a low forward-base to emitter leakage current of 5mA and a maximum collector-base voltage of 30V.
The PBSS5320T,215 is a voltage controlled device, meaning that the output current is dependent on the voltage applied to the base. This has a wide range of applications from amplifying small signals from a few mV to several hundred mV, to switching high-power components on and off. This makes the PBSS5320T,215 a very versatile transistor for use in consumer electronics where both low input signals and a high-level output are required.
The typical current gain of the PBSS5320T,215 is between 50 and 200. This wide range of gain values can be utilized in both linear and saturated amplifier designs, as well as switching applications. The low forward base-to-emitter voltage of 0.5 V keeps the base-emitter junction temperature low. This is important in circuits that need high-power switching and constant operation.
When used as an amplifier, the PBSS5320T,215 operates with a commonly used Class A amplifier configuration. This allows it to operate in the linear-region, meaning it amplifies signal voltage independent of signal current. This is important for amplifying low signal-level audio inputs in consumer electronics. The combination of the wide current-gain range, low signal-level and a low forward-base to emitter voltage makes the PBSS5320T,215 one of the best amplifiers for consumer electronics.
The PBSS5320T,215 can also be used as a switch in high-power applications. When the base-emitter voltage exceeds the 0.23V value, the transistor enters the saturated region. This is when the output is fully on and external components can be connected to the terminal of the transistor to enable high-power operations. This makes the PBSS5320T,215 an ideal option when large amounts of power are needed to be switched on and off.
In conclusion, the PBSS5320T,215 is a high-performing single bipolar transistor with a variety of applications. It has excellent properties including a high current gain with a low forward-base-to-emitter voltage, which makes it ideal for both linear and saturated applications. It is useful in amplifying low-level signals and can also be used in switching operations when large amounts of power are required.
The specific data is subject to PDF, and the above content is for reference
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