PBSS5350SS,115

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The PBSS5350SS,115 is a low voltage, low gate charge N and P-channel MOSFET array, designed for high speed switching applications. It is designed for use in high speed, low voltage portable and hand-held computing, communications and gaming applications. It features two P-Channel MOSFETs, two N-Channel MOSFETs and one dual, controlled MOSFET.

The twin P-channel MOSFETs are optimized to minimize conduction and switching losses while offering higher current capability per area. The N-channel MOSFETs are also optimized for reduced power loss and space savings. The dual, controlled MOSFET is designed to reduce static and dynamic power loss. It also offers improved ESD protection.

A major benefit of the PBSS5350SS,115 is its extremely low on-state resistance. This characteristic allows for higher switching frequencies and reduced heating effects. Its low gate charge also contributes to significantly less switching loss. As a result, the device is suitable for a broad range of applications, including AC/DC converters, inverters, static rectifiers and converters for DC/DC, DC/AC and AC/DC converters.

The PBSS5350SS,115 utilizes a single, integrated circuit that consists of two P-channel MOSFETs, two N-Channel MOSFETs, and one dual, controlled MOSFET. Additionally, it provides an internal enable signal and voltage level shift logic, making it suitable for both low-side and high-side switch applications. The device also features an integrated level shift circuit, which allows it to operate effectively even in wide circuit configurations.

The PBSS5350SS,115 is easy to use, with its single dual in-line package, and it can be used in a wide range of applications. It is suitable for AC/DC, DC/DC or DC/AC power converters and inverters, as well as for driving motor applications. Additionally, it can be used to control both port-side and automotive applications.

The PBSS5350SS,115 utilizes the proven, efficient, and reliable MOSFET technology. Its flexible design allows for quick and easy implementation, as well as versatility and lower system costs. Its higher switched current yields greater efficiency and offers an improved cost-performance ratio. Its low gate charge also offers a improved power dissipation and lower system costs.

The overall performance of the PBSS5350SS,115 is enhanced by its low capacitance, low gate charge, low RDS on and its improved switching capability. Its extremely low gate charge and RDS on enable high speed switching performance and improved thermal management. Additionally, the device’s low gate charge reduces switching losses, while its low capacitance reduces current losses in low voltage power conversion applications.

In summary, the PBSS5350SS,115 is an ideal device for a broad range of high speed switching applications. It utilizes efficient and reliable MOSFET technology to deliver lower system costs. Its reduced gate charge and low RDS on enable an improved thermal management, higher switching performance and improved system reliability. Its single DIP package allows for quick and easy implementation, and its low capacitance reduces current losses in low voltage power conversion designs.

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