PBSS5420D,115 Allicdata Electronics
Allicdata Part #:

1727-5774-2-ND

Manufacturer Part#:

PBSS5420D,115

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 20V 4A 6TSOP
More Detail: Bipolar (BJT) Transistor PNP 20V 4A 80MHz 1.1W Sur...
DataSheet: PBSS5420D,115 datasheetPBSS5420D,115 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.10766
6000 +: $ 0.10071
15000 +: $ 0.09377
30000 +: $ 0.09261
Stock 3000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 420mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Power - Max: 1.1W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Base Part Number: PBSS5420
Description

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The PBSS5420D,115 is a PNP Bipolar Junction Transistor (BJT) belonging to the Single subcategory of transistors. It is a semiconductor device with three terminals, consisting of two p-type and one n-type materials arranged in an asymmetric fashion. The PNP transistor is widely used in electronics design due to its ability to amplify voltage or current. The PBSS5420D,115 is an example of such a device.

The PBSS5420D,115 consists of a base, emitter and collector, which are connected to the external circuit. It is a type of amplifier, in which the collector current is controlled by the base-emitter voltage. The base-emitter voltage is inversely related to the collector current, while the collector is inversely related to the base current. Therefore, the higher the base-emitter voltage, the lower the collector current. This allows for precise control over the collector current.

The PBSS5420D,115 has a DC voltage gain coefficient of 18 V/V and an output current capability of up to 1A. It operates in a temperature range of -40 to +85°C and is packaged in a 0.1 inch-wide SO-8 space saving outline. The device also has an integral ESD protection diode.

The PBSS5420D,115 is used in a variety of applications. It is often used in amplifier circuits, especially in audio applications where it is used to amplify small signals. It can also be used in oscillators, switching circuits and other time-controlled circuits. Additionally, it can be used in digital logic circuit designs to produce logic gates, such as AND and OR gates. Due to its compact size and wide temperature range, it is also used in portable and automotive electronics.

The PBSS5420D,115 is also used in power supply circuits and power transistors such as voltage regulators. It can be used as a dual-in-line package (DIP) circuit element for current sensing and voltage monitoring. It is also used in pulse circuits to generate and control pulse width modulation (PWM). In addition, it is used in analogue switches and RF power amplifiers.

Apart from its use in electronics circuitry, the PBSS5420D,115 is also used in optoelectronic applications. Due to its junction depletion modulation characteristics and wide bandwidth, it can effectively modulate, amplify and switch of visible light signals. This makes it useful for fiber channel communications, fiber optics, and optical fiber networks.

In conclusion, the PBSS5420D,115 is a single PNP BJT transistor that is used in various application fields. It has a gain coefficient of 18 V/V and an output current capability of up to 1A. It is particularly useful in amplifier circuits, oscillators, switching and digital logic circuits, as well as analog switches and RF power amplifiers. Additionally, it can be used in optoelectronics, such as fiber optics and optical fiber networks.

The specific data is subject to PDF, and the above content is for reference

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