PBSS8110X,135

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Transistors - Bipolar (BJT) - Single - PBSS8110X135 Application Field and Working Principle

The PBSS8110X135 is a type of Bipolar (BJT) Single transistor, manufactured by NXP. It is a general-purpose, medium-power NPN device with a high-speed switching function. Its package is a 2-pin DPAK, which is an ideal choice for space-constrained applications.

The PBSS8110X135 has a Collector-Base Voltage (VCBO) of 135V, Emitter-Base Voltage (VEBO) of 5V, Collector-Emitter Voltage (VCEO) of 60V, and a Power Dissipation (PD) of 625mW. It can be operated between temperatures ranging from -55°C to 150°C. It has a maximum Collector-Base Breakdown Voltage (BVcb) of 200V and a Collector-Emitter Breakdown Voltage (BVce) of 80V. The Forward Transfer Admittance of the device is 10mA/V.

The PBSS8110X135 is commonly used in applications such as for transistor switches, amplifiers, and for power control and switching. It can also be used in matching circuits, electrical isolation, and driving circuitries. It is designed for switching with a high-speed turn-on and high-frequency applications. It is a robust device suitable for many microprocessor, logic, and power applications.

The operating principle of the PBSS8110X135 lies in the three thin-oxide layers of the emitter, base, and collector. When power is applied, current will travel from the emitter to the collector through the base, amplifying the signal. The transistor remains “on” until it is turned “off”. As the base current decreases, voltage drop across the device is increased, driving the current to its off state.

The PBSS8110X135 is an ideal choice for low-noise applications as it has minimal power dissipation. Its low voltage drop reduces device stress and provides better efficiency. Furthermore, it offers minimal ON-resistance for a wide range of operating temperature. This helps reducing power losses and optimizing the efficiency of the circuit. The PBSS8110X135 features good stability under large temperature changes and has good thermal tracking. This ensures optimum performance of the device in a wide temperature range.

The PBSS8110X135 is a versatile transistor that offers a wide range of features, such as a high-speed switching, low-noise operation, high operating temperature range, good thermal tracking, and minimal power dissipation that make it suitable for a wide range of applications. The PBSS8110X135 is an ideal choice for applications in a wide range of applications, including power control and switching, amplifiers, transistor switches, applications that require low-noise operation, and many more.

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