Allicdata Part #: | PDTA115EMB,315-ND |
Manufacturer Part#: |
PDTA115EMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA115EMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Base Part Number: | PDTA115 |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Package / Case: | 3-XFDFN |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 180MHz |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 100 kOhms |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 20mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PDTA115EMB, which stands for "Pre-Biased Dual Transistor Array", is a single, pre-biased, silicon-controlled rectifier. It is a member of the Bipolar Junction Transistor (BJT) family. The PDTA115EMB is used in many applications where high-current capability and low-resistance switching are of prime importance. This device is designed for use in communications, industrial control, and automotive systems.
The PDTA115EMB consists of a pair of transistors driven in opposite directions and sharing a common emitter. The transistors are pre-biased to ensure a linear gain over the entire range of voltages and currents. This allows the device to switch at a lower threshold voltage and provide greater power efficiency.
The two transistors of the PDTA115EMB are connected so that when the base-emitter junctions of one of the transistors are forward biased, the other is reverse biased. When an external voltage is applied, it is compared to the voltage dropped across the other transistor. The result is two different states: high and low. In this way, the PDTA115EMB can be used as either an on-off switch or as a linear amplifier.
The PDTA115EMB has many applications in the industrial control and automotive fields. In the industrial control field, the device is used to control the speed of motors or to create the necessary signals to operate robots. In the automotive field, the device is used in the steering and braking systems, as well as in the lighting and audio systems. The device can also be used to control audio amplifiers, DVD players, and other audio/video equipment.
The PDTA115EMB also has a number of advantages over other types of transistors. It is able to dissipate more power than equivalent BJT transistors, has better temperature stability, and its lower voltage rating makes it suitable for use in appliances.
The working principle of the PDTA115EMB is quite simple. A voltage is applied between the base and the collector, causing a current to flow from the base to the collector. The amount of current and the direction of flow depend on the type of transistor being used. When the current is conducted, it causes the device to switch states. If the voltage applied is positive, the device is on, and if the voltage is negative, it is off.
The PDTA115EMB is a single, pre-biased, silicon controlled rectifier. It offers high current capability and low-resistance switching, making it suitable for industrial control and automotive systems. The device is easy to use, efficient, and reliable, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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